| No. |
Part Name |
Description |
Manufacturer |
| 181 |
ISD5116X |
Single-Chip Voice Record/Playback Device Up to 16-Minute Duration with Digital Storage Capability |
Winbond Electronics |
| 182 |
LD511 |
Class A Compression Amplifier |
Gennum Corporation |
| 183 |
LSD5111-XX |
LED Displays Numeric 7-segment |
etc |
| 184 |
LSD5112-XX |
LED Displays Numeric 7-segment |
etc |
| 185 |
LSD5113-XX |
LED Displays Numeric 7-segment |
etc |
| 186 |
LSD5114-XX |
LED Displays Numeric 7-segment |
etc |
| 187 |
LSD5115-XX |
LED Displays Numeric 7-segment |
etc |
| 188 |
MDE-10D511K |
510V; max peak current:3500A; metal oxide varistor. Standard D series 10mm disc |
MDE Semiconductor |
| 189 |
MDE-14D511K |
510V; max peak current:6000A; metal oxide varistor. Standard D series 14mm disc |
MDE Semiconductor |
| 190 |
MDE-20D511K |
Metal Oxide Varistors |
etc |
| 191 |
MDE-20D511K |
510V; max peak current:10000A; metal oxide varistor. Standard D series 20mm disc |
MDE Semiconductor |
| 192 |
MDE-25D511K |
510V; max peak current:20000A; metal oxide varistor. Standard D series 25mm disc |
MDE Semiconductor |
| 193 |
MDE-32D511K |
510V; max peak current:25000A; metal oxide varistor. High energy series 32mm single disc |
MDE Semiconductor |
| 194 |
MDE-40D511K |
510V; max peak current:40000A; metal oxide varistor. High energy series 40mm single disc |
MDE Semiconductor |
| 195 |
MDE-53D511K |
510V; max peak current:70000A; metal oxide varistor. High energy series 53mm single disc |
MDE Semiconductor |
| 196 |
MDE-7D511K |
MDE Semiconductor, Inc. Circuit Protection Products |
etc |
| 197 |
MDE-7D511M |
510V; max peak current:1750A; metal oxide varistor. Standard D series 7mm disc |
MDE Semiconductor |
| 198 |
ND5111-3G |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 199 |
ND5112-3G |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 200 |
ND5112-5F |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 201 |
ND5113-3G |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 202 |
ND5113-5F |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 203 |
ND5114-3G |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 204 |
ND5114-5F |
4 V, GaAs epitaxial schottky barrier diode |
NEC |
| 205 |
NFV10D511K |
Varistor. |
Ceramate |
| 206 |
NFV14D511K |
Varistor. |
Ceramate |
| 207 |
NFV20D511K |
Varistor |
Ceramate |
| 208 |
NTZD5110N |
Small Signal MOSFET 60 V, 310 mA, Dual N-Channel with ESD Protection |
ON Semiconductor |
| 209 |
NVD5117PL |
Power MOSFET, -60 V, -61 A, 16 mΩ, Single P-Channel |
ON Semiconductor |
| 210 |
PSD511B1 |
PSD5XX/ZPSD5XX FAMILY FIELD-PROGRAMMABLE MICROCONTROLLER PERIPHERALS |
SGS Thomson Microelectronics |
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