| No. |
Part Name |
Description |
Manufacturer |
| 181 |
MLL1.4KESD58A |
Transient Voltage Suppressor |
Microsemi |
| 182 |
MLL1.4KESD58C |
Transient Voltage Suppressor |
Microsemi |
| 183 |
MLL1.4KESD58CA |
Transient Voltage Suppressor |
Microsemi |
| 184 |
MLL14KESD58 |
Transient Voltage Suppressor |
Microsemi |
| 185 |
MLL14KESD58A |
Transient Voltage Suppressor |
Microsemi |
| 186 |
ND587R-3C |
4 V, GaAs schottky barrier diode array |
NEC |
| 187 |
ND587R-3P |
4 V, GaAs schottky barrier diode array |
NEC |
| 188 |
ND587R-3R |
GaAs Epitaxial schottky barrier diode QUAD |
NEC |
| 189 |
ND587R-3R |
4 V, GaAs schottky barrier diode array |
NEC |
| 190 |
ND587T-3B |
4 V, GaAs schottky barrier diode array |
NEC |
| 191 |
ND587T-3P |
4 V, GaAs schottky barrier diode array |
NEC |
| 192 |
ND587T-3R |
GaAs Epitaxial Schottky barrier diode PAIR |
NEC |
| 193 |
ND587T-3R |
4 V, GaAs schottky barrier diode array |
NEC |
| 194 |
NDL7911PD581 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With SC-PC connector. ITU-T wavelengh 1558.17 nm. Frequency 192.4 THz. |
NEC |
| 195 |
NDL7911PD589 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (360 km). With SC-PC connector. ITU-T wavelengh 1558.98 nm. Frequency 192.3 THz. |
NEC |
| 196 |
NDL7912PD581 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (600 km). With SC-PC connector. ITU-T wavelengh 1558.17 nm. Frequency 192.4 THz. |
NEC |
| 197 |
NDL7912PD589 |
1550 nm optical fiber comm. EA modulator integrated MQW-DFB laser diode module for 2.5 Gb/s D-WDM ultralong-reach applications (600 km). With SC-PC connector. ITU-T wavelengh 1558.98 nm. Frequency 192.3 THz. |
NEC |
| 198 |
NLMD5820 |
2.65 W Filterless Class-D Audio Amplifier with Integrated Dual SPST Switch |
ON Semiconductor |
| 199 |
NTD5802N |
NTD5802N |
ON Semiconductor |
| 200 |
NTD5802N |
NTD5802N |
ON Semiconductor |
| 201 |
NTD5803N |
NTD5803N |
ON Semiconductor |
| 202 |
NTD5803N |
NTD5803N |
ON Semiconductor |
| 203 |
NTD5804N |
40 V, 69 A, Single N−Channel, DPAK, 8.5 mÙ RDS(on) |
ON Semiconductor |
| 204 |
NTD5805N |
Power MOSFET, 40 V, 51 A, Single N-Channel |
ON Semiconductor |
| 205 |
NTD5806N |
Power MOSFET, 40 V, 33 A, Single N-Channel |
ON Semiconductor |
| 206 |
NTD5807N |
Power MOSFET, 40 V, 23 A, Single N-Channel |
ON Semiconductor |
| 207 |
NTD5862N |
Power MOSFET, N-Channel, 60 V, 98 A, 5.7 mΩ |
ON Semiconductor |
| 208 |
NTD5865N |
Power MOSFET, 60 V, 43 A, 18 mΩ, N-Channel |
ON Semiconductor |
| 209 |
NTD5865NL |
Power MOSFET, 60 V, 46 A, 16 mΩ, N-Channel |
ON Semiconductor |
| 210 |
NTD5867NL |
NTD5867NL N-Channel Power MOSFET |
ON Semiconductor |
| | | |
