No. |
Part Name |
Description |
Manufacturer |
181 |
BD616LV4017ECG55 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
182 |
BD616LV4017ECG70 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
183 |
BD616LV4017ECP55 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
184 |
BD616LV4017ECP70 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
185 |
BD616LV4017EI-55 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
186 |
BD616LV4017EI-70 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
187 |
BD616LV4017EIG55 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
188 |
BD616LV4017EIG70 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
189 |
BD616LV4017EIP55 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
190 |
BD616LV4017EIP70 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit |
Brilliance Semiconductor |
191 |
BD617 |
NPN SILICON EPIBASE TRANSISTORS |
Siemens |
192 |
BD617 |
PNP SILICON EPIBASE TRANSISTORS |
Siemens |
193 |
BD618 |
PNP SILICON EPIBASE TRANSISTORS |
Siemens |
194 |
BD619 |
PNP SILICON EPIBASE TRANSISTORS |
Siemens |
195 |
BD619 |
NPN SILICON EPIBASE TRANSISTORS |
Siemens |
196 |
BUD616A |
Silicon NPN High Voltage Switching Transistor |
Vishay |
197 |
CD61 |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
198 |
CD610816 |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
199 |
CD610816A |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
200 |
CD611216 |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
201 |
CD611216A |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
202 |
CD611416 |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
203 |
CD611416A |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
204 |
CD611616 |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
205 |
CD611616A |
POW-R-BLOK Dual & Single Diode Isolated Module 160 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
206 |
CDBD6100-G |
Schottky Barrier Rectifiers Diodes, VRRM=100V, VR=100V, IO=6A |
Comchip Technology |
207 |
CFD611 |
60.000W Medium Power NPN Plastic Leaded Transistor. 110V Vceo, 6.000A Ic, 1000 hFE. |
Continental Device India Limited |
208 |
CSD611 |
2.000W Medium Power NPN Plastic Leaded Transistor. 110V Vceo, 6.000A Ic, 2000 - 20000 hFE. |
Continental Device India Limited |
209 |
D61A |
Thermistor |
TOSHIBA |
210 |
D61A |
DISK TYPE THERMISTOR |
TOSHIBA |
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