| No. |
Part Name |
Description |
Manufacturer |
| 181 |
BAW156 |
General Purpose Diodes - Silicon Low Leakage Diode Array |
Infineon |
| 182 |
BAW156 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode) |
Siemens |
| 183 |
BAW56 |
Silicon Switching Diode Array with co... |
Infineon |
| 184 |
BAW56 |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
| 185 |
BAW56 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) |
Siemens |
| 186 |
BAW56S |
Silicon Switching Diode Array |
Infineon |
| 187 |
BAW56S |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
| 188 |
BAW56S |
High-speed double diode array |
Philips |
| 189 |
BAW56S |
Silicon Switching Diode Array (For high-speed switching applications Common anode) |
Siemens |
| 190 |
BAW56U |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching |
Infineon |
| 191 |
BAW56W |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
| 192 |
BAW56W |
Silicon Switching Diode Array (For high speed switching applications Common anode) |
Siemens |
| 193 |
BAW756DW |
100V; 300mA quad surface mount swithcing diode array. For general purpose switching applications |
Diodes |
| 194 |
BGX50A |
General Purpose Diodes - Silicon Switching Diode Array with bridge configuration |
Infineon |
| 195 |
BGX50A |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens |
| 196 |
BSM150GB120DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 197 |
BSM150GB170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 198 |
BSM300GA120DN2E3166 |
IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 199 |
BSM300GA170DN2E3166 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 200 |
BSM35GB120DN2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
| 201 |
C4675 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 202 |
C4675-102 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 203 |
C4675-103 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 204 |
C4675-302 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 205 |
C67070-A2007-A70 |
IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 206 |
C67070-A2111-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
Siemens |
| 207 |
C67070-A2709-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 208 |
C67070-A2710-A67 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 209 |
C67076-A2112-A70 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area) |
Siemens |
| 210 |
C9004 |
Driver circuit for Si photodiode array |
Hamamatsu Corporation |
| | | |
