| No. |
Part Name |
Description |
Manufacturer |
| 181 |
74F779DCQR |
8-bit bidirectional binary counter with TRI-STATE outputs. Commercial grade device with burn-in. |
National Semiconductor |
| 182 |
74F779FCQR |
8-bit bidirectional binary counter with TRI-STATE outputs. Commercial grade device with burn-in. |
National Semiconductor |
| 183 |
74F779LCQR |
8-bit bidirectional binary counter with TRI-STATE outputs. Commercial grade device with burn-in. |
National Semiconductor |
| 184 |
74F779QCQR |
8-bit bidirectional binary counter with TRI-STATE outputs. Commercial grade device with burn-in. |
National Semiconductor |
| 185 |
74F779SCQR |
8-bit bidirectional binary counter with TRI-STATE outputs. Commercial grade device with burn-in. |
National Semiconductor |
| 186 |
74F779SDCQR |
8-bit bidirectional binary counter with TRI-STATE outputs. Commercial grade device with burn-in. |
National Semiconductor |
| 187 |
74F779SPCQR |
8-bit bidirectional binary counter with TRI-STATE outputs. Commercial grade device with burn-in. |
National Semiconductor |
| 188 |
74FR16245QCQR |
16-bit transceiver with TRI-STATE outputs. Commercial grade device with burn-in. |
National Semiconductor |
| 189 |
74FR245PCQR |
Octal bidirectional transceiver with TRI-STATE outputs. Commercial grade device with burn-in. |
National Semiconductor |
| 190 |
74FR245SCQR |
Octal bidirectional transceiver with TRI-STATE outputs. Commercial grade device with burn-in. |
National Semiconductor |
| 191 |
AN-551 |
Application Note - Tuning diode design techniques |
Motorola |
| 192 |
APPLICATION NOTE 551 |
Tuning diode design techniques |
Motorola |
| 193 |
BBY51 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 194 |
BBY51-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 195 |
BBY51-07 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation |
Siemens |
| 196 |
BBY52 |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 197 |
BBY52-03W |
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
Siemens |
| 198 |
BBY53 |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 199 |
BBY53-02W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 200 |
BBY53-03W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
Siemens |
| 201 |
CF300 |
N- Channel-GaAs-MESFET-Tetrode Depletion Mode |
etc |
| 202 |
CX11250 |
Host-Processed, V.90/K56flex Modem Device Set with CX11250 Host Side Device, CX20463 SmartDAA, and Optional CX20437 Voice Codec for PCI Bus/Mini PCI-Based Mobile Applications |
Conexant |
| 203 |
CXD1198AQ |
CD-ROM Subcode Decoder |
SONY |
| 204 |
DG501 |
8-Channel Multiplex Switch with Decode designed for Multiplexing Signals, Data Acquisition |
Siliconix |
| 205 |
DS8884A |
High Voltage Cathode Decoder/Driver |
National Semiconductor |
| 206 |
DS8884AN |
High Voltage Cathode Decoder/Driver |
National Semiconductor |
| 207 |
DSK10 |
Diffused Junction Silicon Diode Designed for 5mm-pitch Automatic Insertion 1.0A Power Rectifier |
SANYO |
| 208 |
EL34 |
OUTPUT PENTODE PEDTHODE DE SOTRIE ENDPENTODE |
Philips |
| 209 |
EL84 |
OUTPUT PENTODE PENTHODE DE SORTIE ENDPENTODE |
Philips |
| 210 |
GN01010 |
Gallium Arsenide Devices |
Panasonic |
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