No. |
Part Name |
Description |
Manufacturer |
181 |
1N4578A |
Low-level temperature-compensated zener reference diode. Max voltage 0.010 V. |
Motorola |
182 |
1N4579 |
Low-level temperature-compensated zener reference diode. Max voltage 0.002 V. |
Motorola |
183 |
1N4579A |
Low-level temperature-compensated zener reference diode. Max voltage 0.005 V. |
Motorola |
184 |
1N458 |
Low leakage diode. Working inverse voltage 125V. |
Fairchild Semiconductor |
185 |
1N4580 |
Low-level temperature-compensated zener reference diode. Max voltage 0.048 V. |
Motorola |
186 |
1N4580A |
Low-level temperature-compensated zener reference diode. Max voltage 0.099 V. |
Motorola |
187 |
1N4581 |
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V. |
Motorola |
188 |
1N4581A |
Low-level temperature-compensated zener reference diode. Max voltage 0.050 V. |
Motorola |
189 |
1N4582 |
Low-level temperature-compensated zener reference diode. Max voltage 0.010 V. |
Motorola |
190 |
1N4582A |
Low-level temperature-compensated zener reference diode. Max voltage 0.020 V. |
Motorola |
191 |
1N4583 |
Low-level temperature-compensated zener reference diode. Max voltage 0.005 V. |
Motorola |
192 |
1N4583A |
Low-level temperature-compensated zener reference diode. Max voltage 0.010 V. |
Motorola |
193 |
1N4584 |
Low-level temperature-compensated zener reference diode. Max voltage 0.002 V. |
Motorola |
194 |
1N4584A |
Low-level temperature-compensated zener reference diode. Max voltage 0.005 V. |
Motorola |
195 |
1N4606 |
Silicon epitaxial planar type diode. |
Panasonic |
196 |
1N4607 |
Silicon epitaxial planar type diode. |
Panasonic |
197 |
1N4608 |
Silicon epitaxial planar type diode. |
Panasonic |
198 |
1N4614C |
500mW low noise silicon zener diode. Nominal zener voltage 1.8V. 2% tolerance. |
Jinan Gude Electronic Device |
199 |
1N4614D |
500mW low noise silicon zener diode. Nominal zener voltage 1.8V. 1% tolerance. |
Jinan Gude Electronic Device |
200 |
1N4615C |
500mW low noise silicon zener diode. Nominal zener voltage 2.0V. 2% tolerance. |
Jinan Gude Electronic Device |
201 |
1N4615D |
500mW low noise silicon zener diode. Nominal zener voltage 2.0V. 1% tolerance. |
Jinan Gude Electronic Device |
202 |
1N4616C |
500mW low noise silicon zener diode. Nominal zener voltage 2.2V. 2% tolerance. |
Jinan Gude Electronic Device |
203 |
1N4616D |
500mW low noise silicon zener diode. Nominal zener voltage 2.2V. 1% tolerance. |
Jinan Gude Electronic Device |
204 |
1N4617C |
500mW low noise silicon zener diode. Nominal zener voltage 2.4V. 2% tolerance. |
Jinan Gude Electronic Device |
205 |
1N4617D |
500mW low noise silicon zener diode. Nominal zener voltage 2.4V. 1% tolerance. |
Jinan Gude Electronic Device |
206 |
1N4618C |
500mW low noise silicon zener diode. Nominal zener voltage 2.7V. 2% tolerance. |
Jinan Gude Electronic Device |
207 |
1N4618D |
500mW low noise silicon zener diode. Nominal zener voltage 2.7V. 1% tolerance. |
Jinan Gude Electronic Device |
208 |
1N4619C |
500mW low noise silicon zener diode. Nominal zener voltage 3.0V. 2% tolerance. |
Jinan Gude Electronic Device |
209 |
1N4619D |
500mW low noise silicon zener diode. Nominal zener voltage 3.0V. 1% tolerance. |
Jinan Gude Electronic Device |
210 |
1N461A |
General purpose high conductance diode. Working inverse voltage 25V. |
Fairchild Semiconductor |
| | | |