| No. |
Part Name |
Description |
Manufacturer |
| 181 |
BF679 |
Epitaxial planar PNP transistor, intended to be used in UHF-VHF range up to 900MHz |
SGS-ATES |
| 182 |
BF679M |
Epitaxial planar PNP transistor, intended to be used in UHF-VHF range up to 900MHz, low thermal drift |
SGS-ATES |
| 183 |
BTB15-200B |
V(drm): 200V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 184 |
BTB15-400B |
V(drm): 400V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 185 |
BTB15-600B |
V(drm): 600V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 186 |
BTB15-700B |
V(drm): 700V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 187 |
BTB15-800B |
V(drm): 800V; 15A; triac. For glass passivated chip, Igt specified in four quadrants |
SGS Thomson Microelectronics |
| 188 |
CH1022 |
Capacitor with paper impregnated in wax |
IPRS Baneasa |
| 189 |
CH1023 |
Tubular capacitor with paper impregnated in oil |
IPRS Baneasa |
| 190 |
CL304L |
High-output GaAlAs IRED mounted in a low profile clear package. |
Kondenshi Corp |
| 191 |
COMPARISON TABLE |
The transistors listed in this comparison table are not identical, however, their data is so similar that they can be interchanged in almost all circuits |
TUNGSRAM |
| 192 |
COMPARISON TABLE |
The transistors listed in this comparison table are not identical, however, their data is so similar that they can be interchanged in almost all circuits |
TUNGSRAM |
| 193 |
CXA3117 |
Achieving Low Power and High Speed in Paging System IF IC |
SONY |
| 194 |
CY62157DV18L-55BVI |
Packages offered in a 48-ball FBGA |
Cypress |
| 195 |
CY62157DV18L-70BVI |
Packages offered in a 48-ball FBGA |
Cypress |
| 196 |
CY62157DV18LL-55BVI |
Packages offered in a 48-ball FBGA |
Cypress |
| 197 |
CY62157DV18LL-70BVI |
Packages offered in a 48-ball FBGA |
Cypress |
| 198 |
E702360_SH7058 |
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. |
Renesas |
| 199 |
ELM-1081SURWA |
The ELM-1081 series are a large emitting area ED sources configured in a 40 dots 5*8 matrix array |
Everlight Electronics |
| 200 |
ELM-1081SURWA-S530-A2 |
The ELM-1081 series are a large emitting area ED sources configured in a 40 dots 5*8 matrix array |
Everlight Electronics |
| 201 |
ELM-1081SURWA/S530-A2 |
The ELM-1081 series are a large emitting area ED sources configured in a 40 dots 5*8 matrix array |
Everlight Electronics |
| 202 |
G3VM-351G |
Slim, 2.1-mm High Relay Incorporating a MOS FET Optically Coupled with an Infrared LED in a Miniature, Flat SOP Package |
OMRON Electronics |
| 203 |
HA17431 |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 204 |
HA17431VLTP |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 205 |
HA17431VUP |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 206 |
HA17432VLTP |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 207 |
HA17432VUP |
Regarding the change of names mentioned in the document/ such as Hitachi Electric and Hitachi XX/ to Renesas Technology Corp. |
Hitachi Semiconductor |
| 208 |
HFA08TB60PBF |
600V 8A UltraFast Recovery Diode packaged in TO-220AC package |
International Rectifier |
| 209 |
HFA15PB60PBF |
600V 15A UltraFast Recovery Diode packaged in TO-247AC (2 Lead) package |
International Rectifier |
| 210 |
HFA15TB60PBF |
600V 15A UltraFast Recovery Diode packaged in TO-220AC package |
International Rectifier |
| | | |
