| No. |
Part Name |
Description |
Manufacturer |
| 181 |
46101 |
1 W, 28 V, 960 MHz, UHF emitter transistor |
Acrian |
| 182 |
46104 |
4 W, 28 V, 1000 MHz, UHF emitter transistor |
Acrian |
| 183 |
46104-2 |
4 W, 28 V, 1000 MHz, UHF emitter transistor |
Acrian |
| 184 |
46110 |
10 W, 28 V, 1000 MHz, UHF emitter transistor |
Acrian |
| 185 |
46110-2 |
10 W, 28 V, 1000 MHz, UHF emitter transistor |
Acrian |
| 186 |
46120 |
20 W, 28 V, 1000 MHz, UHF emitter transistor |
Acrian |
| 187 |
46120-2 |
20 W, 28 V, 1000 MHz, UHF emitter transistor |
Acrian |
| 188 |
80143 |
1 W, 15 V, 2300 MHz common emitter transistor |
GHz Technology |
| 189 |
AT-31625 |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
| 190 |
AT-31625-BLK |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
| 191 |
AT-31625-TR1 |
4.8 V NPN Common Emitter Medium Power Output Transistor |
Agilent (Hewlett-Packard) |
| 192 |
AT-33225 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
Agilent (Hewlett-Packard) |
| 193 |
AT-33225-BLK |
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
Agilent (Hewlett-Packard) |
| 194 |
AT-33225-TR1 |
4.8 V NPN Common Emitter Output Power Transistor for AMPS, ETACS Phones |
Agilent (Hewlett-Packard) |
| 195 |
AT-36408 |
4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones |
Agilent (Hewlett-Packard) |
| 196 |
AT-36408-BLK |
4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones |
Agilent (Hewlett-Packard) |
| 197 |
AT-36408-TR1 |
4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones |
Agilent (Hewlett-Packard) |
| 198 |
AT-38086 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor |
Agilent (Hewlett-Packard) |
| 199 |
AT-38086-BLK |
4.8 V NPN Silicon Bipolar Common Emitter Transistor |
Agilent (Hewlett-Packard) |
| 200 |
AT-38086-TR1 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor |
Agilent (Hewlett-Packard) |
| 201 |
BC107A |
NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 180 |
SGS Thomson Microelectronics |
| 202 |
BC107B |
NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
| 203 |
BC108A |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 180 |
SGS Thomson Microelectronics |
| 204 |
BC108B |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
| 205 |
BC108C |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 |
SGS Thomson Microelectronics |
| 206 |
BC109B |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
| 207 |
BC109C |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 |
SGS Thomson Microelectronics |
| 208 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 209 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 210 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
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