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Datasheets for ENT B

Datasheets found :: 1841
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 IMH20 Dual High Current BRT ON Semiconductor
182 IMH20TR1G Dual High Current BRT ON Semiconductor
183 IRPLCFL8U Three Level Dimming CFL Fluorescent Ballast International Rectifier
184 IRPLDIM3 Wide Range Input Linear Dimming Fluorescent Ballast International Rectifier
185 IRPLDIM5E Four Level Switch Dim Fluorescent Ballast International Rectifier
186 IRPLLNR3 Universal Input Linear Fluorescent Ballast using the IR2167 International Rectifier
187 IRPLLNR4 Universal Input Linear Fluorescent Ballast using the IR2166 International Rectifier
188 IRPLLNR5 Universal Input Linear Fluorescent Ballast for 54W TL5 Lamp International Rectifier
189 IRPLLNR7 Universal Input Linear Flourescent Ballast using the IRS2166DPBF International Rectifier
190 IRPLMB1E Mini-ballast for single 25W compact fluorescent ballast, European version with 230VACin International Rectifier
191 IRS2538DS Magnetic Replacement Ballast IC in a 8-Lead SOIC Package International Rectifier
192 IRS2538DSTRPBF Magnetic Replacement Ballast IC in a 8-Lead SOIC Package International Rectifier
193 K4R271669A-N(M)CK7 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
194 K4R271669A-N(M)CK8 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
195 K4R271669A-NB(M)CCG6 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
196 K4R271669AM-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
197 K4R271669AM-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
198 K4R271669AM-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
199 K4R271669AN-CG6 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. Samsung Electronic
200 K4R271669AN-CK7 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
201 K4R271669AN-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
202 K4R441869A-N(M)CG6 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
203 K4R441869A-N(M)CK7 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
204 K4R441869A-N(M)CK8 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
205 K4R441869AM-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
206 K4R441869AM-CK7 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
207 K4R441869AM-CK8 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
208 K4R441869AN-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
209 K4R441869AN-CK7 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
210 K4R441869AN-CK8 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic


Datasheets found :: 1841
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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