No. |
Part Name |
Description |
Manufacturer |
181 |
IMH20 |
Dual High Current BRT |
ON Semiconductor |
182 |
IMH20TR1G |
Dual High Current BRT |
ON Semiconductor |
183 |
IRPLCFL8U |
Three Level Dimming CFL Fluorescent Ballast |
International Rectifier |
184 |
IRPLDIM3 |
Wide Range Input Linear Dimming Fluorescent Ballast |
International Rectifier |
185 |
IRPLDIM5E |
Four Level Switch Dim Fluorescent Ballast |
International Rectifier |
186 |
IRPLLNR3 |
Universal Input Linear Fluorescent Ballast using the IR2167 |
International Rectifier |
187 |
IRPLLNR4 |
Universal Input Linear Fluorescent Ballast using the IR2166 |
International Rectifier |
188 |
IRPLLNR5 |
Universal Input Linear Fluorescent Ballast for 54W TL5 Lamp |
International Rectifier |
189 |
IRPLLNR7 |
Universal Input Linear Flourescent Ballast using the IRS2166DPBF |
International Rectifier |
190 |
IRPLMB1E |
Mini-ballast for single 25W compact fluorescent ballast, European version with 230VACin |
International Rectifier |
191 |
IRS2538DS |
Magnetic Replacement Ballast IC in a 8-Lead SOIC Package |
International Rectifier |
192 |
IRS2538DSTRPBF |
Magnetic Replacement Ballast IC in a 8-Lead SOIC Package |
International Rectifier |
193 |
K4R271669A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
194 |
K4R271669A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
195 |
K4R271669A-NB(M)CCG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
196 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
197 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
198 |
K4R271669AM-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
199 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
200 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
201 |
K4R271669AN-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
202 |
K4R441869A-N(M)CG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
203 |
K4R441869A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
204 |
K4R441869A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
205 |
K4R441869AM-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
206 |
K4R441869AM-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
207 |
K4R441869AM-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
208 |
K4R441869AN-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
209 |
K4R441869AN-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
210 |
K4R441869AN-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
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