| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = |
USHA India LTD |
| 182 |
2SC917 |
Silicon NPN Planar Transistor, intended for use in TV Video IF Final Stage |
Hitachi Semiconductor |
| 183 |
2SC945 |
Transistor. Audio frequency amplifier high frequency osc. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 50V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 150mA. |
USHA India LTD |
| 184 |
2SC983 |
Silicon NPN triple diffused planar transistor, Black and White TV Video Output and High Voltage switching applications |
TOSHIBA |
| 185 |
2SC995 |
Silicon NPN triple diffused MESA transistor, color TV video output applications |
TOSHIBA |
| 186 |
2SC996 |
Silicon NPN triple diffused MESA transistor, color TV video output applications |
TOSHIBA |
| 187 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
| 188 |
2SD227 |
Transistor. Low frequency power amplifier. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic = 300mA. |
USHA India LTD |
| 189 |
2SD313 |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 40 @ Ic = 2A. Pd = 30W. |
USHA India LTD |
| 190 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
| 191 |
2SD640 |
SILICON NPN TRIPLE DIFFUSEO TYPE |
TOSHIBA |
| 192 |
2SD640 |
SILICON NPN TRIPLE DIFFUSEO TYPE |
TOSHIBA |
| 193 |
2SD880Y |
NPN silicon plastic power transistor. Designed for low frequency power amplifier. Vceo =60V, DC current gain: 20 @ Ic = 3A. Pd = 30W. |
USHA India LTD |
| 194 |
2SK218 |
Si N-channel junction. Video camera. |
Panasonic |
| 195 |
2SK443 |
Video Camera First-Stage Applications |
SANYO |
| 196 |
2SK444 |
N-Channel Junction Silicon FET Video Camera Applications |
SANYO |
| 197 |
2SK445 |
N-Channel Junction Silicon FET Video Camera 1st Stage Applications |
SANYO |
| 198 |
3SK28 |
Silicon N-Channel junction Field Effect Transistor, Video pre-amplifier or VHF band amplifier applications |
TOSHIBA |
| 199 |
485ELC |
Max voltage:20V; 250mA; high speed ethernet data line protector. For ethernet- 10/100 base T, catagory 5 systems, RS-485 serial communication lines, ISDN equipment/systems, video transmission systems |
Protek Devices |
| 200 |
54ACT715 |
Programmable Video Sync Generator |
National Semiconductor |
| 201 |
54ACT715-R |
Programmable Video Sync Generator |
National Semiconductor |
| 202 |
5962-0254701QPA |
Dual Wideband Video Op Amp |
National Semiconductor |
| 203 |
5962-0254701QPA |
Dual Wideband Video Op Amp |
National Semiconductor |
| 204 |
5962-0254701QPA |
Dual Wideband Video Op Amp 8-CDIP -55 to 125 |
Texas Instruments |
| 205 |
5962-0254701VPA |
Dual Wideband Video Op Amp |
National Semiconductor |
| 206 |
5962-0254701VPA |
Dual Wideband Video Op Amp |
National Semiconductor |
| 207 |
5962-0420201QPA |
Single Wideband Video Op Amp |
National Semiconductor |
| 208 |
5962-0420201QPA |
Single Wideband Video Op Amp |
National Semiconductor |
| 209 |
5962-0721201 |
Video Distribution Amplifier |
Intersil |
| 210 |
5962-9060001PA |
Fast Settling, Video Op Amp with Disable |
National Semiconductor |
| | | |
