| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2SA928A |
PNP transistor for audio power amplifier, collector-emitter voltage=30V, collector current =2A |
Unisonic Technologies |
| 182 |
2SA940 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
| 183 |
2SA940A |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS. |
TOSHIBA |
| 184 |
2SA950 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Power Amplifier Applications |
TOSHIBA |
| 185 |
2SA965 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 186 |
2SA966 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 187 |
2SA985 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 188 |
2SA986A |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 189 |
2SB1000 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair 2SD 1366 |
Hitachi Semiconductor |
| 190 |
2SB1000A |
LOW FREQUENCY POWER AMPLIFIER Complementary pair 2SD 1366A |
Hitachi Semiconductor |
| 191 |
2SB1015 |
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 192 |
2SB1015A |
Transistor Silicon PNP Triple Diffused Type Audio Frequency Power Amplifier Applications |
TOSHIBA |
| 193 |
2SB1016 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
| 194 |
2SB1016A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 195 |
2SB1018A |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 196 |
2SB1031 |
SILICON NPN EPITAXIAL LOW FREQUENCY POWER AMPLIFIER HIGH CURRENT SWITCHING |
Hitachi Semiconductor |
| 197 |
2SB1031K |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1435K |
Hitachi Semiconductor |
| 198 |
2SB1033 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 199 |
2SB1046 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1464 |
Hitachi Semiconductor |
| 200 |
2SB1056 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Panasonic |
| 201 |
2SB1057 |
SI NPN TRIPLE DIFFUSED PLANAR HIGH POWER AMPLIFIER |
Panasonic |
| 202 |
2SB1058 |
LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD1489 |
Hitachi Semiconductor |
| 203 |
2SB1061 |
Silicon PNP Triple Diffused Low Frequency Power Amplifier |
Hitachi Semiconductor |
| 204 |
2SB1067 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS, POWER AMPLIFIER APPLICATIONS. |
TOSHIBA |
| 205 |
2SB1077 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1558 |
Hitachi Semiconductor |
| 206 |
2SB1101 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
| 207 |
2SB1102 |
LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SD1601,2SD1602 |
Hitachi Semiconductor |
| 208 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 209 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 210 |
2SB1122 |
PNP Epitaxial Planar Silicon Transistors Low-Frequency Power Amplifier Applications |
SANYO |
| | | |
