| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2SB468 |
Germanium Transistor PNP Diffused Base Alloyed Emitter, intended for use in TV Horizontal Deflection Power Output |
Hitachi Semiconductor |
| 182 |
2SB471 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 183 |
2SB471 |
GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT |
Unknow |
| 184 |
2SB472 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 185 |
2SB472 |
GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT |
Unknow |
| 186 |
2SB496 |
Germanium Transistor PNP Alloyed Junction, intended for use in Complementary Symmetry Power Output |
Hitachi Semiconductor |
| 187 |
2SB77 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 188 |
2SB77 |
GERMANIUM PNP ALLOYED JUNCTION (LOW SPEED SWITCHING AUDIO FREQUENCY POWER OUTPUT) |
Unknow |
| 189 |
2SB77A |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 190 |
2SC116T |
Silicon Transistor NPN Triple Diffued Planar, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 191 |
2SC1200 |
Silicon NPN epitaxial planar microwave transistor, UHF-S band power amplifier or oscillator applications |
TOSHIBA |
| 192 |
2SC1306 |
Silicon NPN Transistor Final RF Power Output |
Unknow |
| 193 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
| 194 |
2SC150T |
Silicon NPN Transistor Low Temperature Passivation, intended for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 195 |
2SC154C |
Silicon NPN Transistor Triple Diffused Low Temperature Passivation, intended for use in High Voltage and Wide bandwidth video power output |
Hitachi Semiconductor |
| 196 |
2SC1590 |
Silicon NPN Transistor RF Power Output |
Unknow |
| 197 |
2SC2737 |
NPN silicon transistor designed for low noise amplifier of VHF/UHF band |
NEC |
| 198 |
2SC281 |
Silicon NPN Epitaxial LTP Transistor Vcbo=30V, Pc=200mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 199 |
2SC283 |
Silicon NPN Epitaxial LTP Transistor Vcbo=50V, Pc=350mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 200 |
2SC2869 |
Low Noise Amplifier of VHF & UHF band |
NEC |
| 201 |
2SC3964 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS TEMPERATURE COMPENSATED FOR AUDIO AMPLIFIER OUTPUT STAGE |
TOSHIBA |
| 202 |
2SC4568 |
NPN SILICON EPITAXIAL TRANSISTOR UHF TV TUNER OSC/MIXER |
NEC |
| 203 |
2SC4569 |
UHF TV TUNER OSC/MIXER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 204 |
2SC5248 |
Transistor for audio amplifier output stages / TV velocity modulation |
ROHM |
| 205 |
2SC5347 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifiers Applications |
SANYO |
| 206 |
2SC5431 |
NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX |
NEC |
| 207 |
2SC608T |
Silicon NPN Triple Diffused, intendend for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 208 |
2SC609T |
Silicon NPN Triple Diffused, intendend for use in 27MHz Transceiver Power Output |
Hitachi Semiconductor |
| 209 |
2SC680 |
Silicon NPN Triple Diffused Transistor, intended for use in 12 Inches TV, Vertical Deflection, Power Output |
Hitachi Semiconductor |
| 210 |
2SC680A |
Silicon NPN Triple Diffused Transistor, intended for use in 17 Inches TV, Vertical Deflection, Power Output |
Hitachi Semiconductor |
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