| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N6136 |
Application Note - Microstrip design techniques for UHF amplifiers |
Motorola |
| 182 |
2N707 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
| 183 |
2N718A |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 184 |
2N915 |
Silicon NPN planar RF transistor for non-saturating switching circuits, RF amplifiers and oscillator circuits |
AEG-TELEFUNKEN |
| 185 |
2N915 |
NPN Transistor RF/IF Amplifier |
Amelco Semiconductor |
| 186 |
2N915A |
NPN Transistor RF/IF Amplifier |
Amelco Semiconductor |
| 187 |
2N916 |
NPN Transistor RF/IF Amplifier |
Amelco Semiconductor |
| 188 |
2N916A |
NPN Transistor RF/IF Amplifier |
Amelco Semiconductor |
| 189 |
2N917 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 190 |
2N918 |
Silicon NPN epitaxial planar transistor for UHF amplifiers and oscillators |
AEG-TELEFUNKEN |
| 191 |
2N918 |
NPN Transistor RF/IF Amplifier |
Amelco Semiconductor |
| 192 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 193 |
2N918 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 194 |
2N918 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
| 195 |
2N956 |
NPN silicon annular Star transistor for high-speed switching and DC to UHF amplifier applications |
Motorola |
| 196 |
2SA1318R |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 197 |
2SA1318S |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 198 |
2SA1318T |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 199 |
2SA1318U |
PNP transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 200 |
2SA1435 |
PNP Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications |
SANYO |
| 201 |
2SA1436 |
PNP Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications |
SANYO |
| 202 |
2SA1437 |
PNP Epitaxial Planar Silicon Transistor High-hFE, AF Amplifier Applications |
SANYO |
| 203 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 204 |
2SA1562 |
PNP Epitaxial Planar Silicon Transistors High-hFE AF Amplifier Applications |
SANYO |
| 205 |
2SA15H |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 206 |
2SA1815 |
PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 207 |
2SA1857 |
PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 208 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 209 |
2SA3331R |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
| 210 |
2SA3331S |
NPN transistor for AF amplifies applications, 60V, 0.2A |
SANYO |
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