| No. |
Part Name |
Description |
Manufacturer |
| 181 |
MBRF1050-G |
Schottky Barrier Rectifiers Diodes, VRRM=50V, VR=50V, IO=10A |
Comchip Technology |
| 182 |
MBRF1050CT |
Rectifier: Schottky |
Taiwan Semiconductor |
| 183 |
MBRF1050CT-G |
Schottky Barrier Rectifiers Diodes, VRRM=50V, VR=50V, IO=10A |
Comchip Technology |
| 184 |
MF1050S-1 |
FOR DIGITAL MOBILE TELEPHONE, Rx |
Mitsubishi Electric Corporation |
| 185 |
MF1050S-2 |
FOR DIGITAL MOBILE TELEPHONE, Rx |
Mitsubishi Electric Corporation |
| 186 |
MF1050V-2 |
FOR DIGITAL MOBILE TELEPHONE, Rx |
Mitsubishi Electric Corporation |
| 187 |
MF1050V-4 |
FOR DIGITAL MOBILE TELEPHONE, Rx |
Mitsubishi Electric Corporation |
| 188 |
MF1051S-1 |
FOR DIGITAL MOBILE TELEPHONE, Tx |
Mitsubishi Electric Corporation |
| 189 |
MF1051S-2 |
FOR DIGITAL MOBILE TELEPHONE, Tx |
Mitsubishi Electric Corporation |
| 190 |
MF1051V-2 |
FOR DIGITAL MOBILE TELEPHONE, Tx |
Mitsubishi Electric Corporation |
| 191 |
MF1051V-5 |
FOR DIGITAL MOBILE TELEPHONE, Tx |
Mitsubishi Electric Corporation |
| 192 |
MF1053S-1 |
FOR DIGITAL MOBILE TELEPHONE, Rx |
Mitsubishi Electric Corporation |
| 193 |
MF1053S-2 |
FOR DIGITAL MOBILE TELEPHONE, Rx |
Mitsubishi Electric Corporation |
| 194 |
MF1055-2 |
FOR WLL, Rx |
Mitsubishi Electric Corporation |
| 195 |
MRF10500 |
MICROWAVE POWER TRANSISTORS |
Motorola |
| 196 |
MRF10501 |
MICROWAVE POWER TRANSISTORS |
Motorola |
| 197 |
MRF10502 |
500 W, microwave power transistor NPN silicon |
MA-Com |
| 198 |
MRF10502 |
MICROWAVE POWER TRANSISTOR NPN SILICON |
Tyco Electronics |
| 199 |
MRF10502_D |
MRF10502 RF Power Transistor - Archived |
Motorola |
| 200 |
MRF10502_D |
MRF10502 RF Power Transistor - Archived |
Motorola |
| 201 |
Q62702-F1050 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
| 202 |
Q62702-F1051 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) |
Siemens |
| 203 |
Q62702-F1052 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 204 |
Q62702-F1053 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage) |
Siemens |
| 205 |
Q62702-F1055 |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
Siemens |
| 206 |
Q62702-F1056 |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 207 |
Q62702-F1057 |
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 208 |
Q62702-F1058 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 209 |
Q62702-F1059 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) |
Siemens |
| 210 |
RF105 |
900 MHz Digital Spread Spectrum Transceiver |
Conexant |
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