| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2SA498 |
PNP transistor for medium power amplifier applications |
TOSHIBA |
| 182 |
2SC2878 |
Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications |
TOSHIBA |
| 183 |
2SC3326 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications |
TOSHIBA |
| 184 |
2SC3327 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS |
TOSHIBA |
| 185 |
2SC3587 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 186 |
2SC3603 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 187 |
2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION |
NEC |
| 188 |
2SC3809 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 189 |
2SC3810 |
NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE |
NEC |
| 190 |
2SC4213 |
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications |
TOSHIBA |
| 191 |
2SC5369 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE AMPLIFICATION |
NEC |
| 192 |
2SC5376 |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
| 193 |
2SC5376F |
Transistor Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications |
TOSHIBA |
| 194 |
2SC5408 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 195 |
2SC5408-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 196 |
2SC5409 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 197 |
2SC5409-T1 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION |
NEC |
| 198 |
2SD1160 |
Transistor Silicon NPN Epitaxial Type (PCT process) Switching Applications Suitable for Motor Drive Applications |
TOSHIBA |
| 199 |
2SD1323 |
For midium speed power switching |
Panasonic |
| 200 |
2SD1326 |
Silicon NPN triple diffusion planar type Darlington For midium speed power switching |
Panasonic |
| 201 |
2SD1327 |
Silicon NPN triple diffusion planar type Darlington For midium speed power switching |
Panasonic |
| 202 |
2SD639 |
Silicon NPN epitaxial planer type(For medium-power general amplification) |
Panasonic |
| 203 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 204 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 205 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 206 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 207 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 208 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 209 |
3260-810S3 |
3200 SERIES SMT CONNECTORS FOR MICROMINIATURE INTERFACES |
Hirose Electric |
| 210 |
3260-8S1 |
3200 SERIES SMT CONNECTORS FOR MICROMINIATURE INTERFACES |
Hirose Electric |
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