No. |
Part Name |
Description |
Manufacturer |
181 |
2N2221A |
NPN silicon annular Star transistor for high-speed and switching and DC to VHF amplifier applications |
Motorola |
182 |
2N2222 |
NPN Silicon transistor for switching applications |
IPRS Baneasa |
183 |
2N2222 |
NPN Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2907 PNP complementary |
Motorola |
184 |
2N2222A |
Silicon transistor for switching applications |
IPRS Baneasa |
185 |
2N2222A |
NPN silicon annular Star transistor for high-speed and switching and DC to VHF amplifier applications |
Motorola |
186 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
187 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
188 |
2N2368 |
Silicon transistor for switching applications |
IPRS Baneasa |
189 |
2N2368 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
190 |
2N2369 |
Silicon transistor for switching applications |
IPRS Baneasa |
191 |
2N2369 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
192 |
2N2369 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
193 |
2N2369A |
Silicon transistor for switching applications |
IPRS Baneasa |
194 |
2N2369A |
NPN silicon epitaxial transistor for high-speed range of 10-100 mAdc switching applications |
Motorola |
195 |
2N2369A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
196 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
197 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
198 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
199 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
200 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
201 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
202 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
203 |
2N2635 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
204 |
2N2800 |
PNP silicon annular transistor for medium-speed switching applications TO-5 case |
Motorola |
205 |
2N2801 |
PNP silicon annular transistor for medium-speed switching applications TO-5 case |
Motorola |
206 |
2N2837 |
PNP silicon annular transistor for medium-speed switching applications TO-18 case |
Motorola |
207 |
2N2838 |
PNP silicon annular transistor for medium-speed switching applications TO-18 case |
Motorola |
208 |
2N2845 |
NPN silicon annular transistor designed for switching applications |
Motorola |
209 |
2N2846 |
NPN silicon annular transistor designed for switching applications |
Motorola |
210 |
2N2847 |
NPN silicon annular transistor designed for switching applications |
Motorola |
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