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Datasheets for GE T

Datasheets found :: 10221
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No. Part Name Description Manufacturer
181 2N6515 High Voltage Transistor 625mW Micro Commercial Components
182 2N6515 High Voltage Transistors ON Semiconductor
183 2N6515 NPN Epitaxial Silicon High Voltage Transistor Samsung Electronic
184 2N6515 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
185 2N6515-D High Voltage Transistors ON Semiconductor
186 2N6515RLRM High Voltage Transistors ON Semiconductor
187 2N6516 NPN Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
188 2N6516 High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
189 2N6517 NPN Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
190 2N6517 High Voltage Transistor 625mW Micro Commercial Components
191 2N6517 High Voltage Transistors ON Semiconductor
192 2N6517 High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
193 2N6517RLRA High Voltage Transistors ON Semiconductor
194 2N6517RLRP High Voltage Transistors ON Semiconductor
195 2N6518 PNP Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
196 2N6518 High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
197 2N6519 PNP Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
198 2N6519 High Voltage Transistor 625mW Micro Commercial Components
199 2N6519 High Voltage Transistors ON Semiconductor
200 2N6519 High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
201 2N6519RLRA High Voltage Transistors ON Semiconductor
202 2N6520 PNP Epitaxial Silicon Transistor - High Voltage Transistor Fairchild Semiconductor
203 2N6520 High Voltage Transistor 625mW Micro Commercial Components
204 2N6520 High Voltage Transistors ON Semiconductor
205 2N6520 High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. USHA India LTD
206 2N6520RL1 High Voltage Transistors ON Semiconductor
207 2N6520RLRA High Voltage Transistors ON Semiconductor
208 2N6520RLRM High Voltage Transistors ON Semiconductor
209 2SA1195 Silicon PNP epitaxial high voltage transistor TOSHIBA
210 2SA1897 20 V, 5 A, PNP ultra-low saturation voltage transistor NEC


Datasheets found :: 10221
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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