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Datasheets for GNE

Datasheets found :: 3500
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 2N2944 PNP silicon annular transistor designed for low-level, high-speed chopper applications Motorola
182 2N2945 PNP silicon annular transistor designed for low-level, high-speed chopper applications Motorola
183 2N2946 PNP silicon annular transistor designed for low-level, high-speed chopper applications Motorola
184 2N2972 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
185 2N2973 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
186 2N2974 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
187 2N2975 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
188 2N2976 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
189 2N2977 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
190 2N2978 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
191 2N2979 Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed Motorola
192 2N3011 NPN silicon low-power transistor designed for switching applications Motorola
193 2N3043 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
194 2N3044 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
195 2N3045 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
196 2N3046 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
197 2N3047 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
198 2N3048 Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
199 2N3049 Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
200 2N3050 Dual PNP silicon transistor designed for low-level, low-noise differential amplifier applications Motorola
201 2N3053 NPN silicon annular transistor designed for medium-current applications Motorola
202 2N3055H NPN silicon power transistor. 15Amp, 100V, 115Watt. These devices are designed for general purpose switching and amplifier applications. USHA India LTD
203 2N3114 NPN silicon transistor designed for high-voltage, low power video amplifier applications Motorola
204 2N3137 Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier SGS-ATES
205 2N3303 NPN silicon annular transistor designet for high-speed, high-current switching and driving applications Motorola
206 2N3423 Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers Motorola
207 2N3424 Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers Motorola
208 2N3425 Dual NPN silicon transistor designed for use as a high-frequency sense amplifier Motorola
209 2N3600 Epitaxial planar NPN transistor designed High-Frequency oscillators and amplifiers SGS-ATES
210 2N3722 NPN silicon transistor designed for medium-current, high-speed, high-voltage switching and driver applications Motorola


Datasheets found :: 3500
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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