| No. |
Part Name |
Description |
Manufacturer |
| 181 |
10SI5R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 500V |
IPRS Baneasa |
| 182 |
10SI6 |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 183 |
10SI6 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 600V |
IPRS Baneasa |
| 184 |
10SI6R |
Silicon rectifier diode 10A |
IPRS Baneasa |
| 185 |
10SI6R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 600V |
IPRS Baneasa |
| 186 |
10SI7 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 700V |
IPRS Baneasa |
| 187 |
10SI7R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 700V |
IPRS Baneasa |
| 188 |
10SI8 |
Silicon rectifier diode |
IPRS Baneasa |
| 189 |
10SI8 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 800V |
IPRS Baneasa |
| 190 |
10SI8R |
Silicon rectifier diode |
IPRS Baneasa |
| 191 |
10SI8R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 800V |
IPRS Baneasa |
| 192 |
10SI9 |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, cathode to case 10A 900V |
IPRS Baneasa |
| 193 |
10SI9R |
Silicon rectifier double diffused diode in a metal case DO-4 with metal glass passage, anode to case 10A 900V |
IPRS Baneasa |
| 194 |
1200GXHH22 |
FAST RECOVERY RECTIFIER (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 195 |
1200GXHH22 |
FAST RECOVERY RECTIFIER (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 196 |
1200JXH23 |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
TOSHIBA |
| 197 |
12BH7-A |
The 12BH7-A is a miniature medium-mu twin troide designed primarily for use as a vertical-deflection amplifier in television receivers |
General Semiconductor |
| 198 |
12CC12 |
Silicon diffused junction rectifier 150V 12A |
TOSHIBA |
| 199 |
12CD12 |
Silicon diffused junction rectifier 150V 12A |
TOSHIBA |
| 200 |
12CWQ10G |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 201 |
12CWQ10GPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 202 |
12CWQ10GTR |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 203 |
12CWQ10GTRL |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 204 |
12CWQ10GTRLPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 205 |
12CWQ10GTRPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 206 |
12CWQ10GTRR |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 207 |
12CWQ10GTRRPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
| 208 |
12F100B |
V(rrm): 1000V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 209 |
12F120B |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
| 210 |
12FC12 |
Silicon diffused junction rectifier 300V 12A |
TOSHIBA |
| | | |
