| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 182 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 183 |
2N681 |
Industrial-type, silicon controlled rectifier, case TO-48 |
Motorola |
| 184 |
2N682 |
Industrial-type, silicon controlled rectifier, case TO-48 |
Motorola |
| 185 |
2N683 |
Industrial-type, silicon controlled rectifier, case TO-48 |
Motorola |
| 186 |
2N684 |
Industrial-type, silicon controlled rectifier, case TO-48 |
Motorola |
| 187 |
2N685 |
Industrial-type, silicon controlled rectifier, case TO-48 |
Motorola |
| 188 |
2N686 |
Industrial-type, silicon controlled rectifier, case TO-48 |
Motorola |
| 189 |
2N687 |
Industrial-type, silicon controlled rectifier, case TO-48 |
Motorola |
| 190 |
2N688 |
Industrial-type, silicon controlled rectifier, case TO-48 |
Motorola |
| 191 |
2N689 |
Industrial-type, silicon controlled rectifier, case TO-48 |
Motorola |
| 192 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 193 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 194 |
2N915 |
NPN silicon annular transistor for high-frequency amplifier, oscillator and switching applications |
Motorola |
| 195 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 196 |
2SA1106 |
PNP PLANAR TRANSISTOR(AUDIO POWER AMPLIFIER, DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 197 |
2SA1382 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER, High SPEED Switching Applications |
TOSHIBA |
| 198 |
2SA1425 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 199 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 200 |
2SA1575 |
PNP Epitaxial Planar Silicon Transistors High-Frequency Amplifier, Wide-Band Amplifier Applications |
SANYO |
| 201 |
2SA1703 |
PNP Epitaxial Planar Silicon Transistor Low-Frequency Amplifier, Electronic Governor Applications |
SANYO |
| 202 |
2SA1723 |
PNP Epitaxial Planar Silicon Transistors High-Frequency Amplifier, Medium-Power Amplifier Applications |
SANYO |
| 203 |
2SA1815 |
PNP Epitaxial Planar Silicon Transistor FM, RF, MIX, IF Amplifier, High-Frequency General-Purpose Amplifier Applications |
SANYO |
| 204 |
2SA1831 |
PNPTriple Diffused Planar Silicon Transistors High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 205 |
2SA1963 |
PNP Epitaxial Planar Silicon Transistor High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications |
SANYO |
| 206 |
2SA1967 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 207 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
| 208 |
2SA235 |
Germanium Transistor PNP MESA, intended for use in FM RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 209 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 210 |
2SA673AB |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
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