No. |
Part Name |
Description |
Manufacturer |
181 |
12CWQ10GTRRPBF |
The 12CWQ10G surface mount, center tap, Schottky rectifier series has been designed for applications requiring low for forward |
International Rectifier |
182 |
12F100B |
V(rrm): 1000V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
183 |
12F120B |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls |
International Rectifier |
184 |
12FC12 |
Silicon diffused junction rectifier 300V 12A |
TOSHIBA |
185 |
12FD12 |
Silicon diffused junction rectifier 300V 12A |
TOSHIBA |
186 |
12FXF11 |
Rectifier diode |
TOSHIBA |
187 |
12FXF11 |
Silicon alloy-diffused junction avalanche rectifier 3000V 3.8kW 12A |
TOSHIBA |
188 |
12G2C2 |
RECTIFIER STACK |
TOSHIBA |
189 |
12G3A2 |
RECTIFIER STACK |
TOSHIBA |
190 |
12G4B2 |
RECTIFIER STACK |
TOSHIBA |
191 |
12G6A2 |
RECTIFIER STACK |
TOSHIBA |
192 |
12GC11 |
Rectifier diode |
TOSHIBA |
193 |
12GC11 |
Silicon diffused junction rectifier 400V 12A |
TOSHIBA |
194 |
12J2C2 |
RECTIFIER STACK |
TOSHIBA |
195 |
12J3A2 |
RECTIFIER STACK |
TOSHIBA |
196 |
12J4B2 |
RECTIFIER STACK |
TOSHIBA |
197 |
12J6A2 |
RECTIFIER STACK |
TOSHIBA |
198 |
12JC11 |
Rectifier diode |
TOSHIBA |
199 |
12JC11 |
Silicon diffused junction rectifier 600V 12A |
TOSHIBA |
200 |
12LC11 |
Rectifier diode |
TOSHIBA |
201 |
12LC11 |
Silicon diffused junction rectifier 800V 12A |
TOSHIBA |
202 |
12LF11 |
Rectifier diode |
TOSHIBA |
203 |
12LF11 |
Silicon alloy-diffused junction avalanche rectifier 800V 12A 3.8kW |
TOSHIBA |
204 |
12N2C2 |
RECTIFIER STACK |
TOSHIBA |
205 |
12N3A2 |
RECTIFIER STACK |
TOSHIBA |
206 |
12N4B2 |
RECTIFIER STACK |
TOSHIBA |
207 |
12N6A2 |
RECTIFIER STACK |
TOSHIBA |
208 |
12NC11 |
Rectifier diode |
TOSHIBA |
209 |
12NC11 |
Silicon diffused junction rectifier 1000V 12A |
TOSHIBA |
210 |
12NF11 |
Rectifier diode |
TOSHIBA |
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