| No. |
Part Name |
Description |
Manufacturer |
| 181 |
BAS40-04 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 182 |
BAS40-04W |
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 183 |
BAS40-05 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 184 |
BAS40-05W |
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 185 |
BAS40-06 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 186 |
BAS40-06W |
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 187 |
BAS40-07W |
Silicon Schottky Diode Preliminary data (General-purpose diode for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 188 |
BAS40-T1 |
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection) |
Siemens |
| 189 |
BAS40W |
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 190 |
BAS70 |
-Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 191 |
BAS70 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 192 |
BAS70 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 193 |
BAS70 |
-Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 194 |
BAS70-04 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 195 |
BAS70-04S |
Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 196 |
BAS70-04W |
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 197 |
BAS70-05 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 198 |
BAS70-05W |
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 199 |
BAS70-06 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 200 |
BAS70-06S |
Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 201 |
BAS70-06W |
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 202 |
BAS70-07W |
Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 203 |
BAS70W |
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
Siemens |
| 204 |
BB101C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 205 |
BB101M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 206 |
BB102C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 207 |
BB102M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 208 |
BB301 |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier |
Hitachi Semiconductor |
| 209 |
BB301C |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
| 210 |
BB301M |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier |
Hitachi Semiconductor |
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