| No. |
Part Name |
Description |
Manufacturer |
| 181 |
BTB24-800BW |
Triac, 25A, sensitivity 50 mA, 800V |
SGS Thomson Microelectronics |
| 182 |
BTB24-800CW |
Triac, 25A, sensitivity 35 mA, 800V |
SGS Thomson Microelectronics |
| 183 |
C3704-02 |
INputV: 5Vdc; max current: 300mA; compact, lightweight, low current consumption, low cost operates as high sensitivity UV sensor with UV TRON suitable for flame detectors and fire alarms |
Hamamatsu Corporation |
| 184 |
C3704-03 |
INputV: 6-9Vdc; max current: 300mA; compact, lightweight, low current consumption, low cost operates as high sensitivity UV sensor with UV TRON suitable for flame detectors and fire alarms |
Hamamatsu Corporation |
| 185 |
CQY10 |
Gallium arsenide luminiscence diode, infrared source for high modulation frequencies. The spectral emission is in range of the spectral sensitivity of silicon photoelektronic devices |
AEG-TELEFUNKEN |
| 186 |
DN8893 |
High Sensitivity Hall IC (Operation in Alternative Magnetic Field) |
Panasonic |
| 187 |
DN8893MS |
High Sensitivity Hall IC (Operating in Alternative Magnetic Field) |
Panasonic |
| 188 |
DS2Y |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 189 |
DS2Y-S-DC1.5V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 190 |
DS2Y-S-DC12V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 191 |
DS2Y-S-DC24V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 192 |
DS2Y-S-DC3V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 193 |
DS2Y-S-DC48V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 194 |
DS2Y-S-DC5V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 195 |
DS2Y-S-DC6V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 196 |
DS2Y-S-DC9V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 197 |
DS2Y-SL2-DC1.5V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 198 |
DS2Y-SL2-DC12V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 199 |
DS2Y-SL2-DC24V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 200 |
DS2Y-SL2-DC3V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 201 |
DS2Y-SL2-DC48V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 202 |
DS2Y-SL2-DC5V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 203 |
DS2Y-SL2-DC6V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 204 |
DS2Y-SL2-DC9V |
2 Form C contact High sensitivity-200 mW nominal operating power |
Matsushita Electric Works(Nais) |
| 205 |
FPT120 |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 206 |
FPT120A |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 207 |
FPT120B |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 208 |
FPT120C |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 209 |
FPT130 |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
| 210 |
FPT130A |
High Sensitivity Silicon Phototransistors |
Fairchild Semiconductor |
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