| No. |
Part Name |
Description |
Manufacturer |
| 181 |
CLED400 |
3 V, 50 mA, gallium arsenide infrared emitting diode |
Clairex Technologies |
| 182 |
CLED405 |
3 V, 60 mA, gallium aluminum arsenide infrared emitting diode |
Clairex Technologies |
| 183 |
CLI800W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 184 |
CLI810W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 185 |
CLI820W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 186 |
CLI830W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 187 |
CLI835W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 188 |
CQX14 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 189 |
CQX14 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 190 |
CQX15 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 191 |
CQX15 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 192 |
CQX16 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 193 |
CQX16 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 194 |
CQX17 |
GaAs INFRARED EMITTING DIODE |
Fairchild Semiconductor |
| 195 |
CQX17 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
| 196 |
CQX48 |
GaAs Infrared Emitting Diode in Side View Package |
Vishay |
| 197 |
CQY24 |
Visible (red) electroluminiscent GaAsP light emitting diode |
Mullard |
| 198 |
CQY36N |
GaAs Infrared Emitting Diode in Miniature (T-¾) Package |
Vishay |
| 199 |
CQY37N |
GaAs Infrared Emitting Diode in Miniature (T-¾) Package |
Vishay |
| 200 |
CR022 |
N-Channel junction Field-Effect current-limitting transistor |
CCSIT-CE |
| 201 |
CR062 |
N-Channel junction Field-Effect current-limitting transistor |
CCSIT-CE |
| 202 |
CR160 |
N-Channel junction Field-Effect current-limitting transistor |
CCSIT-CE |
| 203 |
CR470 |
N-Channel junction Field-Effect current-limitting transistor |
CCSIT-CE |
| 204 |
EB93 |
Application Note - 60 watt VHF amplifier uses splitting/combining techniques |
Motorola |
| 205 |
EL-1CL3 |
Infrared Emitting Diodes(GaAs) |
Kondenshi Corp |
| 206 |
EL-1K3 |
Infrared Emitting Diodes(GaAs) |
Kondenshi Corp |
| 207 |
EL-1KL3 |
Infrared Emitting Diodes(GaAs) |
Kondenshi Corp |
| 208 |
EL-1KL3 |
INFRARED EMITTING DIODES |
Kondenshi Corp |
| 209 |
EL-1KL5 |
Infrared Emitting Diodes(GaAs) |
Kondenshi Corp |
| 210 |
EL-1KL5 |
INFRARED EMITTING DIODES |
Kondenshi Corp |
| | | |
