No. |
Part Name |
Description |
Manufacturer |
181 |
K4E661612D |
CMOS DRAM |
Samsung Electronic |
182 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
183 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
184 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
185 |
K4E661612D, K4E641612D |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
186 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
187 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
188 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
189 |
K4E661612E, K4E641612E |
4M x 16bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
190 |
K4EB-110V-1 |
K-relay. Uniquely designed relay. 4 form C. Coil voltage 110 V DC. Plug-in and solder. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
191 |
K4EBP-110V-1 |
K-relay. Uniquely designed relay. 4 form C. Coil voltage 110 V DC. PC board terminal. Ordinary sensitive relay. Amber sealed type. |
Matsushita Electric Works(Nais) |
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