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Datasheets for L-P

Datasheets found :: 10889
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No. Part Name Description Manufacturer
181 2N3420SJAN NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Microsemi
182 2N3420SJANTX NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Microsemi
183 2N3420SJANTXV NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Microsemi
184 2N3421JAN NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Microsemi
185 2N3421JANTX NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Microsemi
186 2N3421JANTXV NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Microsemi
187 2N3421SJAN NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Microsemi
188 2N3421SJANTX NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Microsemi
189 2N3421SJANTXV NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Microsemi
190 2N3814SJAN NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Microsemi
191 2N3814SJANTX NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Microsemi
192 2N3814SJANTXV NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Microsemi
193 2N4030 Silicon PNP Epitaxial-Planar Transistor (in german) ITT Semiconductors
194 2N4031 Silicon PNP Epitaxial-Planar Transistor (in german) ITT Semiconductors
195 2N4032 Silicon PNP Epitaxial-Planar Transistor (in german) ITT Semiconductors
196 2N4033 Silicon PNP Epitaxial-Planar Transistor (in german) ITT Semiconductors
197 2N5109 Silicon NPN Epitaxial-Planar HF Transistor IPRS Baneasa
198 2N5109A Silicon NPN Epitaxial-Planar HF Transistor IPRS Baneasa
199 2N5109B Silicon NPN Epitaxial-Planar HF Transistor IPRS Baneasa
200 2N5208 PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz Motorola
201 2N5294 Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. USHA India LTD
202 2N5296 Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. USHA India LTD
203 2N5470 The Use of Coaxial-Package Transistors in Microstripline Circuits - Application Note RCA Solid State
204 2N6107 PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. USHA India LTD
205 2N6292 Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. USHA India LTD
206 2N721 PNP silicon annular transistor for high-frequency general-purpose amplifier applications Motorola
207 2N918 Silicon NPN Epitaxial-Planar Transistor IPRS Baneasa
208 2N918 Silicon NPN Epitaxial-Planar UHF Transistor TELEFUNKEN
209 2N929 Silicon NPN Epitaxial-Planar AF Transistor IPRS Baneasa
210 2N930 Silicon NPN Epitaxial-Planar AF Transistor IPRS Baneasa


Datasheets found :: 10889
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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