| No. |
Part Name |
Description |
Manufacturer |
| 181 |
BSS80B |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 182 |
BSS80C |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 183 |
BSS81B |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 184 |
BSS81C |
NPN Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 185 |
BSS82B |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 186 |
BSS82C |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 187 |
BSY79 |
NPN silicon epitaxy planar transistor with high collector-emitter voltage, suitable as a driver transistor for number display glow tubes |
ITT Semiconductors |
| 188 |
BU406H |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 189 |
BU408 |
NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. |
Wing Shing Computer Components |
| 190 |
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS |
ON Semiconductor |
| 191 |
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 192 |
BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 193 |
C62702-C748 |
PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 194 |
C62702-C853 |
NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
Siemens |
| 195 |
C62702-C854 |
NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
Siemens |
| 196 |
C62702-C855 |
NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
Siemens |
| 197 |
KSC5802D |
Collector base voltage: 1500V; collector-emitter voltage: 800V; emitter-base V: 6V; collector current: 10A; 60W; high voltage color display horizontal deflection output (built in damper diode) |
Fairchild Semiconductor |
| 198 |
LTV703V |
High Collector-Emitter Voltage Type Photocoupler |
Lite-On Technology Corporation |
| 199 |
MJB18004D2T4-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
| 200 |
MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 201 |
MJE18002D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network |
ON Semiconductor |
| 202 |
MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS |
ON Semiconductor |
| 203 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
| 204 |
MJE18004D2 |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ... |
ON Semiconductor |
| 205 |
MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS |
ON Semiconductor |
| 206 |
NTE101 |
Germanium complementary transistor NPN oscillator, mixer for AM radio, medium speed switch. Collector-base voltage 25 V. Collector-emitter voltage 25V. Emitter-base voltage 25V. Collector current 300mA. |
NTE Electronics |
| 207 |
PC356NT |
Type Photocoupler Mini-Flat Package, High Collector-emitter Voltage |
SHARP |
| 208 |
PC358 |
Type Photocoupler Mini-Flat Package, High Collector-emitter Voltage |
SHARP |
| 209 |
PC3Q66Q |
Collector-Emitter Voltage Mini-flat Package, High Type Half Pitch Photocoupler |
SHARP |
| 210 |
PC702V |
High Collector-emitter Voltage Type Photocoupler |
SHARP |
| | | |
