| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 182 |
2N706 |
Silicon N-P-N low power transistor |
Mullard |
| 183 |
2N706A |
Silicon N-P-N low power transistor |
Mullard |
| 184 |
2N707 |
NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications |
Motorola |
| 185 |
2N707 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
| 186 |
2N707A |
NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications |
Motorola |
| 187 |
2N708 |
Silicon N-P-N low power transistor |
Mullard |
| 188 |
2N741 |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 189 |
2N741A |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 190 |
2N915 |
Silicon NPN planar RF transistor for non-saturating switching circuits, RF amplifiers and oscillator circuits |
AEG-TELEFUNKEN |
| 191 |
2N915 |
NPN silicon annular transistor for high-frequency amplifier, oscillator and switching applications |
Motorola |
| 192 |
2N917 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 193 |
2N918 |
Silicon NPN epitaxial planar transistor for UHF amplifiers and oscillators |
AEG-TELEFUNKEN |
| 194 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
| 195 |
2N918 |
Silicon N-P-N low power transistor |
Mullard |
| 196 |
2N918 |
Silicon NPN transistor, VHF-UHF amplification and oscillation |
SESCOSEM |
| 197 |
2N918 |
Epitaxial planar NPN transistor designed High-Frequency oscillators and amplifiers |
SGS-ATES |
| 198 |
2N918 |
Transistor, RF-IF amplifiers/oscillators |
SGS-ATES |
| 199 |
2N918 |
HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS |
ST Microelectronics |
| 200 |
2N929 |
Silicon N-P-N low power transistor |
Mullard |
| 201 |
2N930 |
Silicon N-P-N low power transistor |
Mullard |
| 202 |
2N987 |
Germanium P-N-P low power transistor |
Mullard |
| 203 |
2NOR61 |
Thyristor trigger and control modules, twin NOR |
Mullard |
| 204 |
2SA1778 |
PNP Epitaxial Planar Silicon Transistor VHF Converter, Local Oscillator Applications |
SANYO |
| 205 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 206 |
2SA351 |
Germanium PNP Transistor Drift Junction, intended for use in SW Oscillator, Frequency Converter |
Hitachi Semiconductor |
| 207 |
2SC1009 |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 208 |
2SC1009A |
FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 209 |
2SC1200 |
Silicon NPN epitaxial planar microwave transistor, UHF-S band power amplifier or oscillator applications |
TOSHIBA |
| 210 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
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