DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for LTD

Datasheets found :: 731
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 BC549 Transistor. Switching and AF ampplifier. Low noise. Vcbo = 30V, Vceo= 30V, Vebo = 5V, Pc = 500mW, Ic = 100mA. USHA India LTD
182 BC550 Transistor. Switching and AF amplifier. Low noise. Vcbo = 50V, Vceo= 45V, Vebo = 5V, Pc = 500mW, Ic = 100mA. USHA India LTD
183 BC556 Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -80V, Vceo= -65V, Vebo = -5V, Pc = 500mW, Ic = -100mA. USHA India LTD
184 BC557 Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. USHA India LTD
185 BC558 Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. USHA India LTD
186 BC559 Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -30V, Vceo= -30V, Vebo = -5V, Pc = 500mW, Ic = -100mA. USHA India LTD
187 BC560 Transistor. Switching and AF amplifier. High voltage. Low noise. Vcbo = -50V, Vceo= -45V, Vebo = -5V, Pc = 500mW, Ic = -100mA. USHA India LTD
188 BC635 Transistor. Switching and amplifier applications. Vcer = 45V, Vces = 45V, Vceo= 45V, Vebo = 5V, Pc = 1W, Ic = 1A. USHA India LTD
189 BC636 Transistor. Switching and amplifier applications. Vcer = -45V, Vces = -45V, Vceo= -45V, Vebo = -5V, Pc = 1W, Ic = -1A. USHA India LTD
190 BC637 Transistor. Switching and amplifier applications. Vcer = 60V, Vces = 60V, Vceo= 60V, Vebo = 5V, Pc = 1W, Ic = 1A. USHA India LTD
191 BC638 Transistor. Switching and amplifier applications. Vcer = -60V, Vces = -60V, Vceo = -60V, Vebo = -5V, Pc = 1W, Ic = -1A. USHA India LTD
192 BC640 Transistor. Switching and amplifier applications. Vcer = -100V, Vces = -100V, Vceo = -80V, Vebo = -5V, Pc = 1W, Ic = -1A. USHA India LTD
193 BD241A NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
194 BD241B NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
195 BD241C NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W USHA India LTD
196 BD242A PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
197 BD242B PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
198 BD242C PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. USHA India LTD
199 BD243A NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W USHA India LTD
200 BD243B NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W USHA India LTD
201 BD243C NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W USHA India LTD
202 BD244A PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. USHA India LTD
203 BD244B PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. USHA India LTD
204 BD244C PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. USHA India LTD
205 BU204 NPN silicon power transistor. Horizontal deflection output stages of large screen colour deflection circuits. 2.5Amp, 1300V, 36Watt. USHA India LTD
206 BU205 NPN, horizontal deflection transistor. Designed for use in large screen color deflection circuits. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 2.5Adc, PD = 36W. USHA India LTD
207 BU208 NPN silicon power transistor. Horizontal deflection output stages of large screen colour deflection circuits. 5Amp, 1300V, 12.5Watt. USHA India LTD
208 BU208A NPN, horizontal deflection transistor. Designed for use in televisions. Vceo = 700Vdc, Vcex = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 12.5W. USHA India LTD
209 BU208D NPN, horizontal deflection transistor with integrated damper diode. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 60W. USHA India LTD
210 BU406 NPN, horizontal deflection transistor. For horizontal deflection output stages of TV's ahd CRT's. Vceo = 200Vdc, Vcbo = 400Vdc, Vcev = 400Vdc, Veb = 6Vdc, Ieb = 7Adc, PD = 60W. USHA India LTD


Datasheets found :: 731
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



© 2024 - www Datasheet Catalog com