| No. |
Part Name |
Description |
Manufacturer |
| 181 |
CM50E3U-24H |
IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 182 |
CM50E3U-24H |
Chopper IGBTMOD 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 183 |
CM50MD-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 184 |
CM50MD-12H |
CIB Module Three Phase Converter Three Phase Inverter Brake 50 Amperes/600 Volts |
Powerex Power Semiconductors |
| 185 |
CM50MD1-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE |
Mitsubishi Electric Corporation |
| 186 |
CM50MD1-12H |
CI Module Three Phase Converter Three Phase Inverter 50 Amperes/600 Volts |
Powerex Power Semiconductors |
| 187 |
CM50TF-12H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 188 |
CM50TF-12H |
IGBT Modules: 600V |
Mitsubishi Electric Corporation |
| 189 |
CM50TF-12H |
Six-IGBT IGBTMOD 50 Amperes/600 Volts |
Powerex Power Semiconductors |
| 190 |
CM50TF-24H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 191 |
CM50TF-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 192 |
CM50TF-24H |
Six-IGBT IGBTMOD 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 193 |
CM50TF-28H |
MITSUBISHI IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 194 |
CM50TF-28H |
IGBT Modules:1400V |
Mitsubishi Electric Corporation |
| 195 |
CM50TF-28H |
Six-IGBT IGBTMOD 50 Amperes/1400 Volts |
Powerex Power Semiconductors |
| 196 |
CM50TJ-24F |
Trench Gate Design Six IGBTMOD�� 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 197 |
CM50TU-24F |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 198 |
CM50TU-24F |
MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE |
Mitsubishi Electric Corporation |
| 199 |
CM50TU-24F |
Trench Gate Design Six IGBTMOD�� 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 200 |
CM50TU-24H |
IGBT Modules:1200V |
Mitsubishi Electric Corporation |
| 201 |
CM50TU-24H |
IGBT MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 202 |
CM50TU-24H |
Six IGBTMOD 50 Amperes/1200 Volts |
Powerex Power Semiconductors |
| 203 |
CM50TU-34KA |
IGBT Modules:1700V |
Mitsubishi Electric Corporation |
| 204 |
CM50TU-34KA |
Six IGBTMOD 50 Amperes/1700 Volts |
Powerex Power Semiconductors |
| 205 |
CS2012Z5U104M500NR |
Typical Performance Characteristics |
etc |
| 206 |
DS1856B-M50 |
Dual, Temperature-Controlled Resistors with Internally Calibrated Monitors and Password Protection |
MAXIM - Dallas Semiconductor |
| 207 |
DS1856B-M50+ |
Dual, Temperature-Controlled Resistors with Internally Calibrated Monitors and Password Protection |
MAXIM - Dallas Semiconductor |
| 208 |
DS1856B-M50+T&R |
Dual, Temperature-Controlled Resistors with Internally Calibrated Monitors and Password Protection |
MAXIM - Dallas Semiconductor |
| 209 |
DS1856B-M50/T&R |
Dual, Temperature-Controlled Resistors with Internally Calibrated Monitors and Password Protection |
MAXIM - Dallas Semiconductor |
| 210 |
DS1856E-M50+ |
Dual, Temperature-Controlled Resistors with Internally Calibrated Monitors and Password Protection |
MAXIM - Dallas Semiconductor |
| | | |
