No. |
Part Name |
Description |
Manufacturer |
181 |
SUM85N15-19 |
N-Channel 150-V (D-S) 175C MOSFET |
Vishay |
182 |
TCM850 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range |
Microchip |
183 |
TCM850 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range |
Microchip |
184 |
TCM850 |
REGULATED GaAs FET BIAS SUPPLY |
TelCom Semiconductor |
185 |
TCM850COA |
REGULATED GaAs FET BIAS SUPPLY |
TelCom Semiconductor |
186 |
TCM850EOA |
REGULATED GaAs FET BIAS SUPPLY |
TelCom Semiconductor |
187 |
TCM851 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range |
Microchip |
188 |
TCM851 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range |
Microchip |
189 |
TCM851 |
REGULATED GaAs FET BIAS SUPPLY |
TelCom Semiconductor |
190 |
TCM851COA |
REGULATED GaAs FET BIAS SUPPLY |
TelCom Semiconductor |
191 |
TCM851EOA |
REGULATED GaAs FET BIAS SUPPLY |
TelCom Semiconductor |
192 |
TCM852 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range |
Microchip |
193 |
TCM852 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range |
Microchip |
194 |
TCM852 |
REGULATED GaAs FET BIAS SUPPLY |
TelCom Semiconductor |
195 |
TCM852COA |
REGULATED GaAs FET BIAS SUPPLY |
TelCom Semiconductor |
196 |
TCM852EOA |
REGULATED GaAs FET BIAS SUPPLY |
TelCom Semiconductor |
197 |
TCM853 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range |
Microchip |
198 |
TCM853 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range |
Microchip |
199 |
TCM853 |
REGULATED GaAs FET BIAS SUPPLY |
TelCom Semiconductor |
200 |
TCM853COA |
REGULATED GaAs FET BIAS SUPPLY |
TelCom Semiconductor |
201 |
TCM853EOA |
REGULATED GaAs FET BIAS SUPPLY |
TelCom Semiconductor |
202 |
TD62M8500F |
8CH LOW SATURATION VOLTAGE SINK DRIVER |
TOSHIBA |
203 |
TD62M8501F |
8CH LOW SATURATION VOLTAGE SINK DRIVER |
TOSHIBA |
204 |
TIM8596-15 |
MICROWAVE POWER GaAs FET |
TOSHIBA |
205 |
TIM8596-2 |
MICROWAVE POWER GaAs FET |
TOSHIBA |
206 |
TIM8596-4 |
MICROWAVE POWER GaAs FET |
TOSHIBA |
207 |
TQM7M4014 |
3V Quad-Band GSM850/GSM900/DCS/PCS Power Amplifier Module |
TriQuint Semiconductor |
208 |
TQM7M4022 |
Quad-Band GSM850/900/DCSPCS Power Amplifier Module |
TriQuint Semiconductor |
209 |
TSM85N10CZ |
Discrete Devices-MOSFET-Single N-Channel |
Taiwan Semiconductor |
210 |
USAA10SM703000 |
V850 Series System Simulator SM850 |
NEC |
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