No. |
Part Name |
Description |
Manufacturer |
181 |
IRF831 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
182 |
IRF832 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
183 |
IRF833 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
184 |
IRF840 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
185 |
IRF841 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
186 |
IRF842 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
187 |
IRF843 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR |
Motorola |
188 |
IRF9521 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
189 |
IRF9522 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
190 |
IRF9523 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs |
Supertex Inc |
191 |
IRFF110 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A. |
General Electric Solid State |
192 |
IRFF110 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
193 |
IRFF111 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A. |
General Electric Solid State |
194 |
IRFF112 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. |
General Electric Solid State |
195 |
IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. |
General Electric Solid State |
196 |
IRFF113 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
197 |
IRFF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A. |
General Electric Solid State |
198 |
IRFF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. |
General Electric Solid State |
199 |
IRFF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. |
General Electric Solid State |
200 |
IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. |
General Electric Solid State |
201 |
IRFF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A. |
General Electric Solid State |
202 |
IRFF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. |
General Electric Solid State |
203 |
IRFF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A. |
General Electric Solid State |
204 |
IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. |
General Electric Solid State |
205 |
LA3450 |
PLL FM MPX Stereo Demodulator with Adjustment-Free VCO and Measure Against Adjacent Channel Interference |
SANYO |
206 |
LM2575 |
Power Management- Switching Regulators |
Microchip |
207 |
LM2575-12WT |
Power Management- Switching Regulators |
Microchip |
208 |
LM2575-12WU |
Power Management- Switching Regulators |
Microchip |
209 |
LM2575-12WU-TR |
Power Management- Switching Regulators |
Microchip |
210 |
LM2575-12YN |
Power Management- Switching Regulators |
Microchip |
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