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Datasheets for MON

Datasheets found :: 3983
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 1819-35 35 W, 28 V, 1750-1850 MHz common base transistor GHz Technology
182 1819AB12 12 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
183 1819AB25 25 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
184 1819AB35 35 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
185 1819AB4 4 W, 25 V, 1808-1880 MHz common emitter transistor GHz Technology
186 1920A05 5 W, 26 V, 1930-1990 MHz common emitter transistor GHz Technology
187 1920A12 12 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
188 1920A20 20 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
189 1920AB12 12 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
190 1920AB25 25 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
191 1920AB35 35 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
192 1920AB4 4 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
193 1920AB60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
194 1920CD35 35 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
195 1920CD60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
196 1N6672 30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER Microsemi
197 1N6672JAN 30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER Microsemi
198 1N6672JANTX 30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER Microsemi
199 1N6672JANTXV 30 A 300V COMMON CATHODE DUAL ULTRAFAST RECTIFIER Microsemi
200 1N6673 30 A 400V COMMON CATHODE DUAL ULTRAFAST RECTIFIER Microsemi
201 1N6674 30 A 500V COMMON CATHODE DUAL ULTRAFAST RECTIFIER Microsemi
202 1S1579 Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad TOSHIBA
203 1S1580 Silicon planar diode, TV Horizontal circuit AFC Application, dual in one case, common cathoad TOSHIBA
204 2001 1 W, 28 V, 2000 MHz common base transistor GHz Technology
205 2003 3 W, 28 V, 2000 MHz common base transistor GHz Technology
206 2005 5 W, 28 V, 2000 MHz common base transistor GHz Technology
207 200CNQ035 35V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package International Rectifier
208 200CNQ040 40V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package International Rectifier
209 200CNQ045 45V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package International Rectifier
210 2010 10 W, 28 V, 2000 MHz common base transistor GHz Technology


Datasheets found :: 3983
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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