No. |
Part Name |
Description |
Manufacturer |
181 |
LTC5532ES6#TR |
Precision 300MHz to 7GHz RF Detector with Gain and Offset Adjustment |
Linear Technology |
182 |
LTC5532ES6#TRM |
Precision 300MHz to 7GHz RF Detector with Gain and Offset Adjustment |
Linear Technology |
183 |
LTC5532ES6#TRMPBF |
Precision 300MHz to 7GHz RF Detector with Gain and Offset Adjustment |
Linear Technology |
184 |
LTC5532ES6#TRPBF |
Precision 300MHz to 7GHz RF Detector with Gain and Offset Adjustment |
Linear Technology |
185 |
MAX4074BGESA |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 30V/V, noninverting gain 31V/V, -3dB BW 89kHZ. |
MAXIM - Dallas Semiconductor |
186 |
MAX4074BGEUK-T |
Micropower, Rail-to-Rail, fixed-gain, single, GainAmp op amp. Inverting gain 30V/V, noniverting gain 31V/V, -3dB BW 89kHZ. |
MAXIM - Dallas Semiconductor |
187 |
MAX4075BGESA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 30V/V, noninverting gain 31V/V, -3dB BW 89kHz. |
MAXIM - Dallas Semiconductor |
188 |
MAX4075BGEUA |
Micropower, Rail-to-Rail, fixed-gain, dual, GainAmp op amp. Inverting gain 30V/V, noninverting gain 31V/V, -3dB BW 89kHZ. |
MAXIM - Dallas Semiconductor |
189 |
MAX4174BGEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 30, 1+ (Rf/Dg) noninverting gain 31, -3dB BW 510kHz. |
MAXIM - Dallas Semiconductor |
190 |
MAX4175BGEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 30, 1+ (Rf/Dg) noninverting gain 31, -3dB BW 510kHz. |
MAXIM - Dallas Semiconductor |
191 |
MAX4274BGESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 30, 1+ (Rf/Dg) noninverting gain 31, -3dB BW 510kHz. |
MAXIM - Dallas Semiconductor |
192 |
MAX4274BGEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 30, 1+ (Rf/Dg) noninverting gain 31, -3dB BW 510kHz. |
MAXIM - Dallas Semiconductor |
193 |
MAX4275BGESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 30, 1+ (Rf/Dg) noninverting gain 31, -3dB BW 510kHz. |
MAXIM - Dallas Semiconductor |
194 |
MAX4275BGEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 30, 1+ (Rf/Dg) noninverting gain 31, -3dB BW 510kHz. |
MAXIM - Dallas Semiconductor |
195 |
MJE13004 |
Trans GP BJT NPN 300V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
196 |
MJE13008 |
Trans GP BJT NPN 300V 12A 3-Pin(3+Tab) TO-220 |
New Jersey Semiconductor |
197 |
MJE2160 |
1.5A Power Transistor NPN Silicon 300V 50W |
Motorola |
198 |
MJE3370 |
3A medium-power transistor PNP silicon 30V 25W |
Motorola |
199 |
MJE340 |
0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS |
Motorola |
200 |
MJE350 |
0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS |
Motorola |
201 |
MJE370 |
3A medium-power transistor PNP silicon 30V 25W |
Motorola |
202 |
MJE370K |
3A medium-power transistor PNP silicon 30V 40W |
Motorola |
203 |
MJE5730 |
1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS |
Motorola |
204 |
MJE5731 |
1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS |
Motorola |
205 |
MJE5731A |
1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS |
Motorola |
206 |
MJE5740 |
Trans Darlington NPN 300V 8A 3-Pin(3+Tab) TO-220AB Rail |
New Jersey Semiconductor |
207 |
MM1591J |
Low-saturation 300mA regulators 1.8V |
Mitsumi Electric |
208 |
MM1591K |
Low-saturation 300mA regulators 1.9V |
Mitsumi Electric |
209 |
MM1592A |
Low-saturation 300mA regulators 2.0V |
Mitsumi Electric |
210 |
MM1592B |
Low-saturation 300mA regulators 2.1V |
Mitsumi Electric |
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