No. |
Part Name |
Description |
Manufacturer |
181 |
1N3767 |
Diode Switching 900V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
182 |
1N3767R |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
183 |
1N3767R |
Standard Rectifier (trr more than 500ns) |
Microsemi |
184 |
1N3768 |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
185 |
1N3768 |
Silicon-Power Rectifiers |
Diotec Elektronische |
186 |
1N3768 |
1000V 35A Std. Recovery Diode in a DO-203AB (DO-5)package |
International Rectifier |
187 |
1N3768 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
188 |
1N3768 |
Rectifier Diode |
Motorola |
189 |
1N3768 |
Diode Switching 1KV 35A 2-Pin DO-5 |
New Jersey Semiconductor |
190 |
1N3768E3 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
191 |
1N3768R |
High Power Standard Recovery Rectifiers - DO5 Stud Devices |
America Semiconductor |
192 |
1N3768R |
Standard Rectifier (trr more than 500ns) |
Microsemi |
193 |
1N3768RE3 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
194 |
1N3769 |
90 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
195 |
1N3769 |
Gold Bond Germanium Diode |
ITT Semiconductors |
196 |
1N3769 |
Germanium Signal Diode |
Motorola |
197 |
1N377 |
Zener Diode |
Motorola |
198 |
1N3770 |
Varactor Diode |
Motorola |
199 |
1N3771 |
4-Layer Diode |
Motorola |
200 |
1N3772 |
4-Layer Diode |
Motorola |
201 |
1N3773 |
25 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
202 |
1N3773 |
GOLD BOND GERMANIUM DIODE |
ITT Semiconductors |
203 |
1N3773 |
JEDEC DO-7 PACKAGE |
Jedec |
204 |
1N3773 |
Germanium Signal Diode |
Motorola |
205 |
1N3773 |
GOLD BONDED GERMANIUM DIODES |
New Jersey Semiconductor |
206 |
1N3774 |
Zener Diode 1.15V |
Motorola |
207 |
1N3775 |
Rectifier Diode |
Motorola |
208 |
1N3776 |
Zener Diode 10V 6W |
Motorola |
209 |
1N3777 |
Silicon Signal Diode |
Motorola |
210 |
1N3778 |
Microwave C-X-band Detector |
Motorola |
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