No. |
Part Name |
Description |
Manufacturer |
181 |
2N3905 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
182 |
2N3905 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
183 |
2N3905 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
184 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
185 |
2N3905-D |
General Purpose Transistors PNP Silicon |
ON Semiconductor |
186 |
2N3905BU |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
187 |
2N3905TA |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
188 |
2N3905TAR |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
189 |
2N3905TF |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
190 |
2N3905TFR |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
191 |
2N3906 |
PNP Silicon Transistor (General small signal application Switching application) |
AUK Corp |
192 |
2N3906 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
193 |
2N3906 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 60 - hFE |
Continental Device India Limited |
194 |
2N3906 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
195 |
2N3906 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
196 |
2N3906 |
Low Noise PNP Transistor |
FERRANTI |
197 |
2N3906 |
Switching PNP transistor |
FERRANTI |
198 |
2N3906 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
199 |
2N3906 |
SMALL SIGNAL TRANSISTORS (PNP) |
General Semiconductor |
200 |
2N3906 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
201 |
2N3906 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
202 |
2N3906 |
Switching Transistor |
Korea Electronics (KEC) |
203 |
2N3906 |
Vce=1.0V transistor |
MCC |
204 |
2N3906 |
PNP General Purpose Amplifier |
Micro Commercial Components |
205 |
2N3906 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
206 |
2N3906 |
PNP silicon annular transistor, TO-92 case |
Motorola |
207 |
2N3906 |
Silicon PNP Transistor |
Motorola |
208 |
2N3906 |
PNP Transistor - General Purpose AMPS and Switches |
National Semiconductor |
209 |
2N3906 |
PNP General Purpose Amplifier |
National Semiconductor |
210 |
2N3906 |
PNP Silicon Transistor |
NEC |
| | | |