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Datasheets for ND D

Datasheets found :: 12116
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 2SA1932 TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS TOSHIBA
182 2SC3665 TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER AND DRIVE STAGE AMPLIFIER APPLICATIONS TOSHIBA
183 2SC5171 TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS TOSHIBA
184 2SC5174 TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS TOSHIBA
185 2SD1187 TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS TOSHIBA
186 2SD1994 Transistor - Silicon NPN Epitaxial Planar Type - For low-frequency power amplification and drive, Complementary pair with 2SB1322 and 2SB1322A Panasonic
187 2SJ619 Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications TOSHIBA
188 2SJ620 Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications TOSHIBA
189 2SK246 Field Effect Transistor Silicon N Channel Junction Type For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications TOSHIBA
190 2SK2493 Chopper Regulator and DC .DC Converter Applications TOSHIBA
191 2SK2508 Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC .DC Converter and Motor Applications TOSHIBA
192 2SK2961 Field Effect Transistor Silicon N Channel MOS Type (L2-PI-MOSV) Relay Drive, Motor Drive and DC .DC Converter Application TOSHIBA
193 2SK2963 Field Effect Transistor Silicon N Channel MOS Type (L2-PI-MOSV) Relay Drive, Motor Drive and DC .DC Converter Application TOSHIBA
194 2SK2986 Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Relay Drive, Motor Drive and DC .DC Converter Application TOSHIBA
195 2SK30 N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER/ TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) TOSHIBA
196 2SK30ATM Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications TOSHIBA
197 2SK3373 Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications TOSHIBA
198 2SK3397 Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Relay Drive and DC-DC Converter Applications Motor Drive Applications TOSHIBA
199 2SK3398 Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications TOSHIBA
200 2SK3471 Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications TOSHIBA
201 2SK3499 Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications TOSHIBA
202 2SK3506 Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Relay Drive and DC-DC Converter Applications Motor Drive Applications TOSHIBA
203 2SK3543 Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications TOSHIBA
204 2SK389 N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS) TOSHIBA
205 3135-14 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
206 3135-25 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
207 3135-25N High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
208 3135-35 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
209 3135-45 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
210 3135-7 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics


Datasheets found :: 12116
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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