No. |
Part Name |
Description |
Manufacturer |
181 |
2SA1932 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
182 |
2SC3665 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER AND DRIVE STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
183 |
2SC5171 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
184 |
2SC5174 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
185 |
2SD1187 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS |
TOSHIBA |
186 |
2SD1994 |
Transistor - Silicon NPN Epitaxial Planar Type - For low-frequency power amplification and drive, Complementary pair with 2SB1322 and 2SB1322A |
Panasonic |
187 |
2SJ619 |
Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
TOSHIBA |
188 |
2SJ620 |
Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
TOSHIBA |
189 |
2SK246 |
Field Effect Transistor Silicon N Channel Junction Type For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications |
TOSHIBA |
190 |
2SK2493 |
Chopper Regulator and DC .DC Converter Applications |
TOSHIBA |
191 |
2SK2508 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC .DC Converter and Motor Applications |
TOSHIBA |
192 |
2SK2961 |
Field Effect Transistor Silicon N Channel MOS Type (L2-PI-MOSV) Relay Drive, Motor Drive and DC .DC Converter Application |
TOSHIBA |
193 |
2SK2963 |
Field Effect Transistor Silicon N Channel MOS Type (L2-PI-MOSV) Relay Drive, Motor Drive and DC .DC Converter Application |
TOSHIBA |
194 |
2SK2986 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Relay Drive, Motor Drive and DC .DC Converter Application |
TOSHIBA |
195 |
2SK30 |
N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER/ TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) |
TOSHIBA |
196 |
2SK30ATM |
Field Effect Transistor Silicon N Channel Junction Type Low Noise Pre-Amplifier, Tone Control Amplifier and DC-AC High Input Impedance Amplifier Circuit Applications |
TOSHIBA |
197 |
2SK3373 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
TOSHIBA |
198 |
2SK3397 |
Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Relay Drive and DC-DC Converter Applications Motor Drive Applications |
TOSHIBA |
199 |
2SK3398 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
TOSHIBA |
200 |
2SK3471 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications |
TOSHIBA |
201 |
2SK3499 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
TOSHIBA |
202 |
2SK3506 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Relay Drive and DC-DC Converter Applications Motor Drive Applications |
TOSHIBA |
203 |
2SK3543 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
TOSHIBA |
204 |
2SK389 |
N CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS) |
TOSHIBA |
205 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
206 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
207 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
208 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
209 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
210 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
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