| No. |
Part Name |
Description |
Manufacturer |
| 181 |
UL1401P |
OBUDOWA CE 74 |
UNITRA CEMI |
| 182 |
UL1402P |
OBUDOWA CE 74 |
UNITRA CEMI |
| 183 |
UL1403P |
OBUDOWA CE 74 |
UNITRA CEMI |
| 184 |
UL1480P |
WZMACNIACZ MOCY M.CZ. |
UNITRA CEMI |
| 185 |
UL1481P |
WZMACNIACZE MOCY M. CZ. |
UNITRA CEMI |
| 186 |
UL1481T |
WZMACNIACZE MOCY M. CZ. |
UNITRA CEMI |
| 187 |
UL1495N |
OBUDOWA |
UNITRA CEMI |
| 188 |
UL1496N |
OBUDOWA |
UNITRA CEMI |
| 189 |
UL1496R |
OBUDOWA |
UNITRA CEMI |
| 190 |
UL1497N |
OBUDOWA |
UNITRA CEMI |
| 191 |
UL1497R |
OBUDOWA |
UNITRA CEMI |
| 192 |
UL1498N |
OBUDOWA |
UNITRA CEMI |
| 193 |
UL1498R |
OBUDOWA |
UNITRA CEMI |
| 194 |
UL1540N |
OBUDOWA CE71 |
UNITRA CEMI |
| 195 |
UL1901KI |
OBUDOWS CE 75A |
UNITRA CEMI |
| 196 |
UL1901KII |
OBUDOWS CE 75A |
UNITRA CEMI |
| 197 |
UL1970N |
OBUDOWA CE 71 |
UNITRA CEMI |
| 198 |
UL1980N |
OBUDOWS CE 81 |
UNITRA CEMI |
| 199 |
UL7523N |
OBIDOWA CE 70 |
UNITRA CEMI |
| 200 |
ULA6481P |
WZMACNIACZE MOCY M. CZ. |
UNITRA CEMI |
| 201 |
ULA6481T |
WZMACNIACZE MOCY M. CZ. |
UNITRA CEMI |
| 202 |
ULA6741N |
ULY 7741N |
UNITRA CEMI |
| 203 |
ULY7701N |
ULY7701 |
UNITRA CEMI |
| 204 |
ULY7741N |
ULY 7741N |
UNITRA CEMI |
| 205 |
W4NRD0X-0000 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 206 |
W4NRD8C-U000 |
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 207 |
W4NXD8C-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 208 |
W4NXD8C-L000 |
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 209 |
W4NXD8C-S000 |
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| 210 |
W4NXD8D-0000 |
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition |
CREE POWER |
| | | |
