| No. |
Part Name |
Description |
Manufacturer |
| 181 |
BAW156 |
Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode) |
Siemens |
| 182 |
BAW56 |
Silicon Switching Diode Array with co... |
Infineon |
| 183 |
BAW56 |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
| 184 |
BAW56 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) |
Siemens |
| 185 |
BAW56S |
Silicon Switching Diode Array |
Infineon |
| 186 |
BAW56S |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
| 187 |
BAW56S |
High-speed double diode array |
Philips |
| 188 |
BAW56S |
Silicon Switching Diode Array (For high-speed switching applications Common anode) |
Siemens |
| 189 |
BAW56U |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching |
Infineon |
| 190 |
BAW56W |
General Purpose Diodes - Silicon Switching Diode Array with common cathode |
Infineon |
| 191 |
BAW56W |
Silicon Switching Diode Array (For high speed switching applications Common anode) |
Siemens |
| 192 |
BAW756DW |
100V; 300mA quad surface mount swithcing diode array. For general purpose switching applications |
Diodes |
| 193 |
BGX50A |
General Purpose Diodes - Silicon Switching Diode Array with bridge configuration |
Infineon |
| 194 |
BGX50A |
Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip) |
Siemens |
| 195 |
C4675 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 196 |
C4675-102 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 197 |
C4675-103 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 198 |
C4675-302 |
16 x 16 element photodiode array detector |
Hamamatsu Corporation |
| 199 |
C9004 |
Driver circuit for Si photodiode array |
Hamamatsu Corporation |
| 200 |
C9118 |
Driver circuit for photodiode array with amplifier |
Hamamatsu Corporation |
| 201 |
C9118-01 |
Driver circuit for photodiode array with amplifier |
Hamamatsu Corporation |
| 202 |
CA3019 |
Diode array, consists of one diode Quad and two isolated diodes on a common substrate |
RCA Solid State |
| 203 |
CA3039 |
Diode array. Six matched diodes on a common substrate. |
General Electric Solid State |
| 204 |
CA3039 |
Diode Array |
Intersil |
| 205 |
CA3039 |
Diode Array, six matched diodes on a common substrate monolithic silicon |
RCA Solid State |
| 206 |
CA3039L |
Beam-Lead Diode Array, 6 matched ultra-fast low-capacitance diodes |
RCA Solid State |
| 207 |
CA3039M |
Diode Array |
Intersil |
| 208 |
CA3039M96 |
Diode Array |
Intersil |
| 209 |
CA3093E |
General-Purpose High-Current N-P-N Transistor-Zener Diode - Diode Array |
RCA Solid State |
| 210 |
CA3141 |
High-Voltage Diode Array For Commercial, Industrial and Military Applications |
Intersil |
| | | |
