No. |
Part Name |
Description |
Manufacturer |
181 |
M470T6554CZ3-CLCC |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
182 |
M470T6554CZ3-CLCC |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
183 |
M470T6554CZ3-CLD5 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
184 |
M470T6554CZ3-CLD5 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
185 |
M470T6554CZ3-CLE6 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
186 |
M470T6554CZ3-CLE6 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
187 |
M470T6554CZ3-CLE7 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
188 |
M470T6554CZ3-CLE7 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC |
Samsung Electronic |
189 |
NT128S64VH4A0GM0-75B |
128Mb: 16Mx64 SDRAM SODIMM based 16Mx16, 4bands, 8K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
190 |
NT128S64VH4A0GM0-7K |
128Mb: 16Mx64 SDRAM SODIMM based 16Mx16, 4bands, 8K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
191 |
NT128S64VH4A0GM0-8B |
128Mb: 16Mx64 SDRAM SODIMM based 16Mx16, 4bands, 8K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
192 |
NT128S64VH8C0GM-75B |
128Mb: 16Mx64 SDRAM SODIMM based 8Mx16, 4bands, 4K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
193 |
NT128S64VH8C0GM-7K |
128Mb: 16Mx64 SDRAM SODIMM based 8Mx16, 4bands, 4K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
194 |
NT128S64VH8C0GM-8B |
128Mb: 16Mx64 SDRAM SODIMM based 8Mx16, 4bands, 4K refresh, 3.3V synchronous DRAMs with SPD |
NANYA |
195 |
P13B16212A |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
196 |
P13B16212V |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
197 |
PC133 |
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD |
Samsung Electronic |
198 |
V43658Y04VATG-75 |
64MB 168-PIN 133 MHZ SDRAM UNBUFFERED SODIMM 3.3 VOLT, 8M x 64 |
Mosel Vitelic Corp |
199 |
V826516B04S |
128 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 16M x 64 |
Mosel Vitelic Corp |
200 |
V826516B04SXTG-A1 |
128MB DDR unbuffered SODIMM 2.5V 16M x 64 |
Mosel Vitelic Corp |
201 |
V826516B04SXTG-B0 |
128MB DDR unbuffered SODIMM 2.5V 16M x 64 |
Mosel Vitelic Corp |
202 |
V826516B04SXTG-B1 |
128MB DDR unbuffered SODIMM 2.5V 16M x 64 |
Mosel Vitelic Corp |
203 |
V826516G04S |
128 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 16M x 64 |
Mosel Vitelic Corp |
204 |
V826516G04SXTG-A1 |
128MB DDR unbuffered SODIMM 2.5V 16M x 64 |
Mosel Vitelic Corp |
205 |
V826516G04SXTG-B0 |
128MB DDR unbuffered SODIMM 2.5V 16M x 64 |
Mosel Vitelic Corp |
206 |
V826516G04SXTG-B1 |
128MB DDR unbuffered SODIMM 2.5V 16M x 64 |
Mosel Vitelic Corp |
207 |
V82658B04S |
64 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 8M x 64 |
Mosel Vitelic Corp |
208 |
V82658B04SXTG-A1 |
64MB DDR unbuffered SODIMM 2.5V 32M x 64 |
Mosel Vitelic Corp |
209 |
V82658B04SXTG-B0 |
64MB DDR unbuffered SODIMM 2.5V 32M x 64 |
Mosel Vitelic Corp |
210 |
V82658B04SXTG-B1 |
64MB DDR unbuffered SODIMM 2.5V 32M x 64 |
Mosel Vitelic Corp |
| | | |