No. |
Part Name |
Description |
Manufacturer |
181 |
2N6134 |
PNP silicon power transistor 50W/7A |
National Semiconductor |
182 |
2N6231 |
SILICON POWER TRANSISTOR |
Central Semiconductor |
183 |
2N6282 |
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
184 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
185 |
2N6282 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
ON Semiconductor |
186 |
2N6283 |
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
187 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
188 |
2N6283 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
ON Semiconductor |
189 |
2N6284 |
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
190 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
191 |
2N6284-D |
Darlington Complementary Silicon Power Transistors |
ON Semiconductor |
192 |
2N6285 |
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
193 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
194 |
2N6285 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
ON Semiconductor |
195 |
2N6286 |
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
196 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
197 |
2N6287 |
DARLINGTON COPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
198 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
199 |
2N6295 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR |
SemeLAB |
200 |
2N6298 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
201 |
2N6299 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
202 |
2N6300 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
203 |
2N6301 |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
204 |
2N6354 |
Silicon power transistor |
SGS-ATES |
205 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
206 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
207 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
208 |
2N6386 |
DARLINGTON SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
209 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
210 |
2N6387 |
DARLINGTON SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
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