No. |
Part Name |
Description |
Manufacturer |
181 |
1T369 |
Silicon Variable Capacitance Diode |
SONY |
182 |
1T379 |
Silicon Variable Capacitance Diode for Electronic |
SONY |
183 |
2322 58. . . . . . |
High Surge Suppression Varistors |
Vishay |
184 |
2N1651 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
185 |
2N1652 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
186 |
2N1653 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
187 |
2N1751 |
PNP Germanium power transistor, low saturation voltage |
Motorola |
188 |
2N2217 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
189 |
2N2218 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
190 |
2N2219 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
191 |
2N2220 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
192 |
2N2221 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
193 |
2N2222 |
NPN Transistor Medium Power, high frequency, low saturation voltage, low leakage |
Amelco Semiconductor |
194 |
2N2222B |
NPN Transistor Medium Power, low noise, high breakdown voltage, low saturation voltage |
Amelco Semiconductor |
195 |
2N2285 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
196 |
2N2286 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
197 |
2N2287 |
PNP Germanium power transistor low satturation voltage, fast switching times |
Motorola |
198 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
199 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
200 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
201 |
2N6255 |
NPN silicon VHF RF power transistor 3W, 12.5V |
Motorola |
202 |
2N6474 |
130 V, epitaxial-base NPN selicon versawatt transistor |
Boca Semiconductor Corporation |
203 |
2SA1598 |
Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) |
Shindengen |
204 |
2SA1599 |
Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) |
Shindengen |
205 |
2SA1600 |
Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) |
Shindengen |
206 |
2SA1601 |
Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) |
Shindengen |
207 |
2SA1679 |
Low-Saturation Voltage Switching Transistors / LSV Series (Three Terminal Type) |
Shindengen |
208 |
2SA1795 |
Low-Saturation Voltage Switching Transistors / LSV Series (Surface Mount) |
Shindengen |
209 |
2SA1796 |
Low-Saturation Voltage Switching Transistors / LSV Series (Surface Mount) |
Shindengen |
210 |
2SA1876 |
Low-Saturation Voltage Switching Transistors / HSV Series (Surface Mount) |
Shindengen |
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