No. |
Part Name |
Description |
Manufacturer |
181 |
2N2096 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
182 |
2N2097 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
183 |
2N2099 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
184 |
2N2100 |
PNP germanium epitaxial mesa transistor for high speed, high-current switching in line an core driver applications |
Motorola |
185 |
2N2168 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
186 |
2N2169 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
187 |
2N2170 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
188 |
2N2193 |
Silicon NPN planar epitaxial transistor for high speed switchings and RF amplifiers |
AEG-TELEFUNKEN |
189 |
2N2218 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
190 |
2N2218A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
191 |
2N2219 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
192 |
2N2219A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
193 |
2N2221 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
194 |
2N2221A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
195 |
2N2222 |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
196 |
2N2222A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
197 |
2N2222ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
198 |
2N2222ACSM4 |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
199 |
2N2222ADCSM |
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
200 |
2N2222AXCSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
201 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
202 |
2N2297 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
203 |
2N2368 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
204 |
2N2369 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
205 |
2N2369A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
206 |
2N2369A1 |
HIGH SPEED / MEDIUM POWER / NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
207 |
2N2369ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
208 |
2N2400 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
209 |
2N2401 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
210 |
2N2402 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
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