| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N404A |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
| 182 |
2N4199 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 183 |
2N4200 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 184 |
2N4201 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 185 |
2N4202 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 186 |
2N4203 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 187 |
2N4204 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 188 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
| 189 |
2N4427 |
VHF OSCILLATOR POWER AMPLIFIER |
ST Microelectronics |
| 190 |
2N5087-D |
Amplifier Transistor PNP Silicon |
ON Semiconductor |
| 191 |
2N525 |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
| 192 |
2N526 |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
| 193 |
2N527 |
Low power, high frequency germanium transistor PNP |
IPRS Baneasa |
| 194 |
2N5400 |
AMPLIFIER TRANSISTOR PNP SILICON |
Boca Semiconductor Corporation |
| 195 |
2N5400RLRA |
Amplifier Transistor PNP |
ON Semiconductor |
| 196 |
2N5400RLRP |
Amplifier Transistor PNP |
ON Semiconductor |
| 197 |
2N5401 |
AMPLIFIER TRANSISTOR PNP SILICON |
Boca Semiconductor Corporation |
| 198 |
2N5401RLRP |
Amplifier Transistor PNP |
ON Semiconductor |
| 199 |
2N5829 |
High frequency transistor PNP silicon |
Motorola |
| 200 |
2N5832 |
NPN Transistor Plastic-case Bipolar |
Micro Commercial Components |
| 201 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 202 |
2N6027 |
Leaded Thyristor PUT |
Central Semiconductor |
| 203 |
2N6027 |
Thyristor PUT 40V 5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 204 |
2N6028 |
Thyristor PUT 40V 5A 3-Pin TO-92 |
New Jersey Semiconductor |
| 205 |
2N6049 |
4 AMPERE POWER TRANSISTOR PNP SILICON |
Motorola |
| 206 |
2N6233 |
4 AMPERE POWER TRANSISTOR PNP SILICON |
Motorola |
| 207 |
2N6235 |
4 AMPERE POWER TRANSISTOR PNP SILICON |
Motorola |
| 208 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
| 209 |
2SA1094 |
Silicon PNP epitaxial transistor, for power amplifier applications |
TOSHIBA |
| 210 |
2SA1173 |
PNP silicon epitaxial transistor power MINI MOLD |
NEC |
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