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Datasheets for P-N

Datasheets found :: 955
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |
No. Part Name Description Manufacturer
181 2N6212 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
182 2N6213 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
183 2N6214 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
184 2N6246 Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. General Electric Solid State
185 2N6247 Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. General Electric Solid State
186 2N6248 Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. General Electric Solid State
187 2N6249 300V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
188 2N6250 375V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
189 2N6251 450V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
190 2N6253 High-power silicon N-P-N transistor. 55V, 115W. General Electric Solid State
191 2N6254 High-power silicon N-P-N transistor. 100V, 150W. General Electric Solid State
192 2N6262 High voltage silicon N-P-N transistor. 170V, 150W. General Electric Solid State
193 2N6263 Medium power silicon N-P-N transistor. 140V, 20W. General Electric Solid State
194 2N6264 Medium power silicon N-P-N transistor. 170V, 50W. General Electric Solid State
195 2N6266 5-W, 2-GHz, Emitter-Balasted Silicon N-P-N Overlay RF Transistor RCA Solid State
196 2N6282 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
197 2N6282 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
198 2N6283 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
199 2N6283 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
200 2N6284 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
201 2N6284 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
202 2N6285 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
203 2N6285 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
204 2N6286 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
205 2N6286 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
206 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
207 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
208 2N6288 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
209 2N6288 EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS Boca Semiconductor Corporation
210 2N6288 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State


Datasheets found :: 955
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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