| No. |
Part Name |
Description |
Manufacturer |
| 181 |
ARJ22A12Z |
SMD RELAYS WITH 8GHz CAPABILITIES |
Matsushita Electric Works(Nais) |
| 182 |
ARJ22A24 |
SMD RELAYS WITH 8GHz CAPABILITIES |
Matsushita Electric Works(Nais) |
| 183 |
ARJ22A24X |
SMD RELAYS WITH 8GHz CAPABILITIES |
Matsushita Electric Works(Nais) |
| 184 |
ARJ22A24Z |
SMD RELAYS WITH 8GHz CAPABILITIES |
Matsushita Electric Works(Nais) |
| 185 |
ARJ22A4H |
SMD RELAYS WITH 8GHz CAPABILITIES |
Matsushita Electric Works(Nais) |
| 186 |
ARJ22A4HX |
SMD RELAYS WITH 8GHz CAPABILITIES |
Matsushita Electric Works(Nais) |
| 187 |
ARJ22A4HZ |
SMD RELAYS WITH 8GHz CAPABILITIES |
Matsushita Electric Works(Nais) |
| 188 |
ASMC-PAB9-TV005 |
ASMC-PAB9-TV005 · Envisium Power PLCC-4 Surface Mount LED |
Agilent (Hewlett-Packard) |
| 189 |
ASMC-PAB9-TV005 |
ASMC-PAB9-TV005 · Envisium Power PLCC-4 Surface Mount LED |
Agilent (Hewlett-Packard) |
| 190 |
AT76C507 |
802.11b Media Access Controller (MAC) and Baseband with USB Master Capabilities. |
Atmel |
| 191 |
ATL35 |
The ATL35 series ASIC family is fabricated on a 0.35 micron CMOS process with up to four levels of metal. This family features arrays with up to 2.7 million routable gates and 976 pins. The high density and high pin count capabilities of t |
Atmel |
| 192 |
ATS137PAB |
3.5 to 20 V, single hall effect switch |
Anachip |
| 193 |
ATS177PAB |
3.5 to 20 V, single output hall effect latch |
Anachip |
| 194 |
ATS266PAB |
4 to 28 V, high voltage hall effect latch |
Anachip |
| 195 |
ATS276PAB |
3.5 to 20V, complementary output hall effect latch |
Anachip |
| 196 |
ATS277PAB |
3.5 to 20V, complementary output hall effect latch |
Anachip |
| 197 |
ATS278PAB |
3.5 to 20 V, two phase hall effect latch with FG output |
Anachip |
| 198 |
ATS477PAB |
3.5 to 20 V, single phase hall effect latch |
Anachip |
| 199 |
AUIR08152S |
The AUIR08152 buffer brings high power gate drive capability to all pre-driver stages. |
International Rectifier |
| 200 |
AUIR08152STR |
The AUIR08152 buffer brings high power gate drive capability to all pre-driver stages. |
International Rectifier |
| 201 |
BF987 |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
Siemens |
| 202 |
BTX92 |
Controlled Avalanche Thyristor with high dV/dt and dl/dt capabilities, superseded by the BTW92 series |
Philips |
| 203 |
BUD42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 204 |
BUD42DT4 |
High Speed/ High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability |
ON Semiconductor |
| 205 |
BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 206 |
BUL42D-D |
High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability |
ON Semiconductor |
| 207 |
CD3016B |
1 WATT CAPABILITY WITH PROPER HEAT SINKING |
Compensated Devices Incorporated |
| 208 |
CD3017B |
1 WATT CAPABILITY WITH PROPER HEAT SINKING |
Compensated Devices Incorporated |
| 209 |
CD3018B |
1 WATT CAPABILITY WITH PROPER HEAT SINKING |
Compensated Devices Incorporated |
| 210 |
CD3019B |
1 WATT CAPABILITY WITH PROPER HEAT SINKING |
Compensated Devices Incorporated |
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