| No. |
Part Name |
Description |
Manufacturer |
| 181 |
CLD156R |
Silicon Photodiode, TO-5 metal can |
Clairex Technologies |
| 182 |
CLD160 |
Silicon Photodiode, TO-5 metal can |
Clairex Technologies |
| 183 |
CLD185 |
Silicon Photodiode, 3 leaded TO-8 metal can |
Clairex Technologies |
| 184 |
CLD185R |
Silicon Photodiode, 3 leaded TO-8 metal can |
Clairex Technologies |
| 185 |
CLD370F |
Silicon Photodiode, 5mm (T-1 3/4) plastic |
Clairex Technologies |
| 186 |
CXA1103 |
PHOTODIODE I-V CONVERSION AMPLIFIER |
SONY |
| 187 |
CXA1103AM |
Photodiode I-V Conversion Amplifier |
SONY |
| 188 |
DF1 |
Germanium photodiode |
IPRS Baneasa |
| 189 |
DF1 |
Ge PHOTODIODE |
IPRS Baneasa |
| 190 |
DF1 |
Germanium Photodiodes type DF |
IPRS Baneasa |
| 191 |
DF1 |
Germanium junction photodiode |
IPRS Baneasa |
| 192 |
DF2 |
Germanium photodiode |
IPRS Baneasa |
| 193 |
DF2 |
Ge PHOTODIODE |
IPRS Baneasa |
| 194 |
DF2 |
Germanium Photodiodes type DF |
IPRS Baneasa |
| 195 |
DF3 |
Germanium photodiode |
IPRS Baneasa |
| 196 |
DF3 |
Ge PHOTODIODE |
IPRS Baneasa |
| 197 |
DF3 |
Germanium Photodiodes type DF |
IPRS Baneasa |
| 198 |
FRM5W232BS |
Incorporates a 30 micron InGaAs Avalanche Photodiode |
Fujitsu Microelectronics |
| 199 |
G1115 |
GaAsP photodiode |
Hamamatsu Corporation |
| 200 |
G1116 |
GaAsP photodiode |
Hamamatsu Corporation |
| 201 |
G1117 |
GaAsP photodiode |
Hamamatsu Corporation |
| 202 |
G1118 |
GaAsP photodiode |
Hamamatsu Corporation |
| 203 |
G1120 |
GaAsP photodiode |
Hamamatsu Corporation |
| 204 |
G1126-02 |
GaAsP photodiode |
Hamamatsu Corporation |
| 205 |
G1127-02 |
GaAsP photodiode |
Hamamatsu Corporation |
| 206 |
G1735 |
GaAsP photodiode |
Hamamatsu Corporation |
| 207 |
G1736 |
GaAsP photodiode |
Hamamatsu Corporation |
| 208 |
G1737 |
GaAsP photodiode |
Hamamatsu Corporation |
| 209 |
G1738 |
GaAsP photodiode |
Hamamatsu Corporation |
| 210 |
G1740 |
GaAsP photodiode |
Hamamatsu Corporation |
| | | |
