| No. |
Part Name |
Description |
Manufacturer |
| 181 |
NCBJ35 |
NPN RF-HF Power Amplifier designed for use in the output stage of 4W AM Citizens Band 27MHz |
National Semiconductor |
| 182 |
NCBS35 |
NPN RF-HF Power Amplifier Transistor |
National Semiconductor |
| 183 |
NCBW35 |
NPN RF-HF Power Amplifier Transistor |
National Semiconductor |
| 184 |
NSC460 |
NPN RF-IF Amp Transistor |
National Semiconductor |
| 185 |
NSC461 |
NPN RF-IF Amp Transistor |
National Semiconductor |
| 186 |
NTE320 |
Silicon NPN RF Power Transistor 40W @ 175MHz |
NTE Electronics |
| 187 |
NTE320F |
Silicon NPN RF Power Transistor 40W @ 175MHz |
NTE Electronics |
| 188 |
NTE325 |
Silicon NPN RF Power Transistor 50W @ 30MHz |
NTE Electronics |
| 189 |
NTE335 |
Silicon NPN RF Power Transistor Designed for power amplifier |
NTE Electronics |
| 190 |
NTE336 |
Silicon NPN RF Power Transistor Designed for power amplifier |
NTE Electronics |
| 191 |
PDTC114 |
NPN resistor-equipped transistor |
Philips |
| 192 |
PDTC114EE |
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ |
Nexperia |
| 193 |
PDTC114EE |
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ |
NXP Semiconductors |
| 194 |
PDTC114EE |
NPN resistor-equipped transistor |
Philips |
| 195 |
PDTC114EEF |
NPN resistor-equipped transistor |
Philips |
| 196 |
PDTC114EK |
NPN resistor-equipped transistor |
Philips |
| 197 |
PDTC114EM |
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ |
Nexperia |
| 198 |
PDTC114EM |
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ |
NXP Semiconductors |
| 199 |
PDTC114EM |
PDTC114E series; NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = 10 kOhm |
Philips |
| 200 |
PDTC114EMB |
NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ |
Nexperia |
| 201 |
PDTC114EMB |
NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ |
NXP Semiconductors |
| 202 |
PDTC114EQA |
50 V, 100 mA NPN resistor-equipped transistors |
Nexperia |
| 203 |
PDTC114ES |
NPN resistor-equipped transistor |
Philips |
| 204 |
PDTC114ET |
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ |
Nexperia |
| 205 |
PDTC114ET |
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ |
NXP Semiconductors |
| 206 |
PDTC114ET |
NPN resistor-equipped transistor |
Philips |
| 207 |
PDTC114EU |
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ |
Nexperia |
| 208 |
PDTC114EU |
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ |
NXP Semiconductors |
| 209 |
PDTC114EU |
NPN resistor-equipped transistor |
Philips |
| 210 |
PDTC114TE |
NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open |
Nexperia |
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