| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N3262 |
Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers |
RCA Solid State |
| 182 |
2N3279 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 183 |
2N3280 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 184 |
2N3281 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 185 |
2N3282 |
PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier |
Motorola |
| 186 |
2N3375 |
Silicon NPN epitaxial high frequency power transistor for VHF and UHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 187 |
2N3375 |
High Frequency NPN transistor |
CCSIT-CE |
| 188 |
2N3375 |
NPN Silicon High-Frequency Transistor |
Siemens |
| 189 |
2N3423 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 190 |
2N3424 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 191 |
2N3425 |
Dual NPN silicon transistor designed for use as a high-frequency sense amplifier |
Motorola |
| 192 |
2N3441 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 193 |
2N3442 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 194 |
2N3442 |
Low frequency transistor |
mble |
| 195 |
2N3442 |
Low frequency transistor |
mble |
| 196 |
2N3553 |
Silicon high frequency epitaxial planar transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 197 |
2N3553 |
High Frequency NPN transistor |
CCSIT-CE |
| 198 |
2N3553 |
High frequency NPN transistor |
FERRANTI |
| 199 |
2N3553 |
NPN silicon high frequency transistor 2.5W - 175MHz |
Motorola |
| 200 |
2N3570 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
Advanced Semiconductor |
| 201 |
2N3570 |
High frequency NPN transistor |
FERRANTI |
| 202 |
2N3571 |
High frequency NPN transistor |
FERRANTI |
| 203 |
2N3572 |
High frequency NPN transistor |
FERRANTI |
| 204 |
2N3600 |
HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS |
SGS Thomson Microelectronics |
| 205 |
2N3600 |
Epitaxial planar NPN transistor designed High-Frequency oscillators and amplifiers |
SGS-ATES |
| 206 |
2N3600 |
HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS |
ST Microelectronics |
| 207 |
2N3632 |
Silicon NPN epitaxial planar high frequency power transistor for VHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 208 |
2N3632 |
High Frequency NPN transistor |
CCSIT-CE |
| 209 |
2N3733 |
NPN silicon transistor designed for amplifier, frequency multiplier and oscillator applications |
Motorola |
| 210 |
2N3771 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| | | |
