| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N6103 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 182 |
2N6107 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 |
SESCOSEM |
| 183 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
| 184 |
2N6111 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 |
SESCOSEM |
| 185 |
2N6121 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 186 |
2N6121 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 187 |
2N6122 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 188 |
2N6122 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 189 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 190 |
2N6123 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 191 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 192 |
2N6124 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 193 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 194 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 195 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 196 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
| 197 |
2N6312 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 198 |
2N653 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 199 |
2N654 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 200 |
2N655 |
PNP Germanium transistor, for high-gain amplifier and switching service in the audio frequency range |
Motorola |
| 201 |
2N6619 |
12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application |
Siemens |
| 202 |
2N697 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 203 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 204 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 205 |
2N707 |
NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications |
Motorola |
| 206 |
2N707A |
NPN silicon epitaxial mesa transistor for VHF oscillator and class C amplifier applications |
Motorola |
| 207 |
2N741 |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 208 |
2N741A |
PNP germanium mesa transistor for oscillator, frequency multiplier and amplifier applications |
Motorola |
| 209 |
2N915 |
NPN silicon annular transistor for high-frequency amplifier, oscillator and switching applications |
Motorola |
| 210 |
2N918 |
NPN silicon annular transistor with high reliability designed for use in VHF and UHF amplifier, mixer and oscillator applications |
Motorola |
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